Related papers: Strained Donor-Bound Excitons in $^{28}$Si
We study the effect of elastic anisotropic biaxial strain on the light emitted by neutral excitons confined in different kinds of semiconductor quantum dots (QDs). We find that the light polarization rotates by up to 80 degree and the…
It is shown that the three-fold rotational symmetry in transition metal dichalcogenides leads to a Coulomb induced renormalization of the effective electron and hole masses near the $K$-points of the Brillouin zone. The magnitude of the…
Doping substantially influences the electronic and photophysical properties of semiconducting single-wall carbon nanotubes (s-SWNTs). Although prior studies have noted that surplus charge carriers modify optical spectra and accelerate…
This work investigates the high-pressure structure of freestanding superconducting ($T_{c}$ = 4.3\,K) boron doped diamond (BDD) and how it affects the electronic and vibrational properties using Raman spectroscopy and x-ray diffraction in…
Excited states in 38,40,42Si nuclei have been studied via in-beam gamma-ray spectroscopy with multi-nucleon removal reactions. Intense radioactive beams of 40S and 44S provided at the new facility of the RIKEN Radioactive Isotope Beam…
We calculate the isovector axial vector form factors of the octet-decuplet hyperon transitions within the framework of the light-cone QCD sum rules (LCSR) to leading in QCD and including higher-twist corrections. In particular, we motivate…
In this paper we consider the essential electronic excited states in parallel chains of semiconducting polymers that are currently being explored for photovoltaic and light-emitting diode applications. In particular, we focus upon various…
We present the calculations for the oscillator strength of the recombination of excitons bound to phosphorous donors in silicon. We show that the direct recombination of the bound exciton cannot account for the experimentally measured…
Donor impurities in wide direct band gap semiconductors provide a promising platform for spin--photon quantum technologies by combining a donor spin qubit with optically addressable transitions. In ZnO, the shallow donor with the largest…
The optical response of phosphorene can be gradually changed by application of moderate uniaxial compression, as the material undergoes the transition into an indirect gap semiconductor and eventually into a semimetal. Strain tunes not only…
We discuss neutral and charged complexes (biexciton and trion) formed by indirect excitons in layered quasi-two-dimensional semiconductor heterostructures. Indirect excitons -- long-lived neutral Coulomb-bound pairs of electrons and holes…
We study the shape coexistence of differently deformed states within $^{28}$Si using shell-model and beyond-mean-field techniques. Experimentally, $^{28}$Si exhibits shape coexistence between an oblate ground state and an excited prolate…
The deformation of viscoelastic drops under electric fields is central to applications in microfluidics, inkjet printing, and electrohydrodynamic manipulation of complex fluids. This study investigates the dynamics of an Oldroyd-B drop…
Atomically precise placement of dopants in Si permits creating substitutional P nanowires by design. High-resolution images show that these wires are few atoms wide with some positioning disorder with respect to the substitutional Si…
The fundamental optical excitations of correlated transition-metal compounds are typically identified with multielectronic transitions localized at the transition-metal site, such as $dd$ transitions. In this vein, intense interest has…
Dopants in silicon have been studied for many decades using optical and electron spin resonance (ESR) spectroscopy. Recently, new features have been observed in the spectra of dopants in isotopically enriched 28Si since the reduced…
Controllable quasiparticle radiation in two-dimensional (2D) semiconductors is essential for efficient carrier recombination, tunable emission, and modulation of valley polarization which are strongly determined by both the density and…
Shear stresses are the driving forces for the creation of both point and extended defects in crystals subjected to high pressures and temperatures. Recently, we observed anomalous elastic materials response in shock-compressed silicon and…
Optically detected resonance spectroscopy has been used to investigate effects of weak random lateral potential energy fluctuations on internal transitions of charged magneto-excitons (trions) in quasi two-dimensional GaAs/AlGaAs…
We investigate the confinement of neutral excitons in a one-dimensional (1D) potential, engineered by proximizing hBN-encapsulated monolayer MoSe$_2$ to ferroelectric domain walls (DW) in periodically poled LiNbO$_3$. Our device exploits…