Related papers: Strained Donor-Bound Excitons in $^{28}$Si
The low dielectric losses of an isotropically pure single crystal $^{28}$Si sample were determined at a temperature of 20 mK and at powers equivalent to that of a single photon. Whispering Gallery Mode (WGM) analysis revealed large Quality…
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step…
The electron and nuclear spins of the shallow donor 31P are promising qubit candidates invoked in many proposed Si-based quantum computing schemes. We have recently shown that the near-elimination of inhomogeneous broadening in highly…
While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC…
$0^+$, $1^-$, $2^+$, and $3^-$ excitations of $^{28}\textrm{Si}$ are investigated via proton and $\alpha$ inelastic scattering off $^{28}\textrm{Si}$. The structure calculation of $^{28}\textrm{Si}$ is performed with the energy variation…
We perform density matrix renormalization group (DMRG) calculations extensively on one-dimensional chains with on site (U) as well as nearest neighbour (V) Coulomb repulsions. The calculations are carried out in full parameter space with…
Room temperature angle-dispersive x-ray diffraction measurements on zircon-type TbVO4 and CeVO4 were performed in a diamond-anvil cell up to 50 GPa using neon as pressure-transmitting medium. In TbVO4 we found at 6.4 GPa evidence of a…
The groundstate energy and binding energy of an exciton, confined in a^M quantum disk, are calculated as a function of an external magnetic field. The confinement potential is a hard wall of finite height. The diamagnetic shift is…
We study a single electron confined in a uniform-torsion medium, a continuum model of a screw dislocation density, in a perpendicular magnetic field, and in the presence of an Aharonov--Bohm flux. Torsion alone produces radial confinement…
We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions…
Bismuth donors ion-implanted in $^{28}$Si and $^\text{nat}$Si are studied using magnetic resonance spectroscopy based on spin dependent recombination. The hyperfine clock transition, at which the linewidth is significantly narrowed, is…
The ability to transport quantum information across some distance can facilitate the design and operation of a quantum processor. One-dimensional spin chains provide a compact platform to realize scalable spin transport for a solid-state…
The ordering wave vector $\mathbf{Q}$ of a spin density wave (SDW), stabilized within the superconducting state of $\mathrm{CeCoIn_5}$ in a high magnetic field, has been shown to be hypersensitive to the direction of the field. $\mathbf{Q}$…
We present a reformulation of axion modified electrodynamics with all modifications redefined within the constitutive relations between the D,H,B and E fields. This allows the interpretation of the axion induced background bound charge,…
Solid-state systems such as P donors in Si have considerable potential for realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a…
Negatively charged silicon vacancy centers (SiV$^-$) in diamond exhibit excellent spin coherence and optical properties, making them promising candidates for quantum technologies. However, the strain-induced inhomogeneous distribution of…
We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-doped samples…
As device miniaturization approaches the atomic limit, it becomes highly desirable to exploit novel paradigms for tailoring electronic structures and carrier dynamics in materials. Elastic strain can in principle be applied to achieve…
The two-dimensional character and reduced screening in monolayer transition-metal dichalcogenides (TMDs) lead to the ubiquitous formation of robust excitons with binding energies orders of magnitude larger than in bulk semiconductors.…
We demonstrate a method which can hyperpolarize both the electron and nuclear spins of 31P donors in Si at low field, where both would be essentially unpolarized in equilibrium. It is based on the selective ionization of donors in a…