Related papers: Strained Donor-Bound Excitons in $^{28}$Si
We study the energies and optical spectra of excitons in twisted bilayers of anisotropic van der Waals semiconductors exhibiting moir\'e patterns, taking phosphorene as a case study. Following the electronic Hamiltonian introduced by us in…
CeRh$_3$Si$_2$ has been reported to exhibit metamagnetic transitions below 5~K, a giant crystal field splitting, and anisotropic magnetic properties from single crystal magnetization and heat capacity measurements. Here we report results of…
Two-electron states bound to donors in silicon are important for both two qubit gates and spin readout. We present a full configuration interaction technique in the atomistic tight-binding basis to capture multi-electron exchange and…
The Zeeman splitting of the donor spectra in cubic- and hexagonal-GaN are studied using an effective mass theory approach. Soft-core pseudopotentials were used to describe the chemical shift of the different substitutional dopants. The…
Inter-valley interference between degenerate conduction band minima has been shown to lead to oscillations in the exchange energy between neighbouring phosphorus donor electron states in silicon \cite{Koiller02,Koiller02A}. These same…
Excitons in Transition Metal Dichalcogenides (TMDs) acquire a spin-like quantum number, a pseudospin, originating from the crystal's discrete rotational symmetry. Here, we break this symmetry using a tunable uniaxial strain, effectively…
Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…
Quasi-elastic (QEL) scattering measurements have been performed using $^{28}$Si projectile off a $^{90}$Zr target at energies around the Coulomb barrier. A Bayesian analysis within the framework of coupled channels (CC) calculations is…
We study the Stark effect for an exciton confined in a pair of vertically coupled quantum dots. A single-band approximation for the hole and a parabolic lateral confinement potential are adopted which allows for the separation of the…
Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear…
Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of…
The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of…
Dipole-bound states in anions exist when a polar neutral core binds an electron in a diffuse orbital through charge--dipole interaction. Electronically excited polar neutral cores can also bind an electron in a diffuse orbital to form…
We perform a detailed analysis of semileptonic $\Xi_b$ decays mediated by flavor-changing neutral currents ($b\to s$ and $b\to d$) with dilepton or dineutrino final states within the perturbative QCD framework. All independent form factors…
We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron after preliminary oxidation of the n-type Si (100) surface. These Si-based nanostructures represent the p-type high…
The neutron-rich nucleus $^{144}$Ba ($t_{1/2}$=11.5 s) is expected to exhibit some of the strongest octupole correlations among nuclei with mass numbers $A$ less than 200. Until now, indirect evidence for such strong correlations has been…
Inspired by the recently-reported strong electric-dipole (E1) transition between the weakly-bound first and second excited states, 3/2- at 765 keV and 1/2+ at 885 keV, in the nucleus 27Ne, the E1 transition is estimated in a model by…
Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing.…
We predict a gigantically long lifetime of the first excited state of an interstitial lithium donor in silicon. The nature of this effect roots in the anomalous level structure of the {\em 1s} Li manifold under external stress. Namely, the…
Quantum wave function engineering of dopant-based Si nano-structures reveals new physics in the solid-state, and is expected to play a vital role in future nanoelectronics. Central to any fundamental understanding or application is the…