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Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as…

Despite over a decade of intense research efforts, the full potential of two-dimensional transition metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration…

Transistor miniaturization requires controlling gate leakage through ultrathin dielectrics and minimizing source/drain contact resistance. Although two-dimensional (2D) semiconductors offer excellent electrostatic control, their interfaces…

Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can not be reached without accompanying gate insulators which are…

Dirac-source field-effect transistors (DS-FETs) have been proposed as promising candidates for low-power switching devices by leveraging the Dirac cone of graphene as a low-pass energy filter. In particular, using two-dimensional (2D)…

Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for enhanced logic density scaling. As we push the…

The performance and scalability of two-dimensional (2D) field-effect transistors (FETs) are strongly influenced by geometry-defined electrostatics. In most 2D FET studies, the gate overlaps with the source and drain electrodes, allowing the…

Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially…

Two-dimensional van der Waals semiconductors are promising for future nanoelectronics. However, integrating high-k gate dielectrics for device applications is challenging as the inert van der Waals material surfaces hinder uniform…

Reliable and precise measurements of the relative energy of band edges in semiconductors are needed to determine band gaps and band offsets, as well as to establish the band diagram of devices and heterostructures. These measurements are…

Quantum engineering entails atom by atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical…

While 2D materials have enormous potential for future device technologies, many challenges must be overcome before they can be deployed at an industrial scale. One of these challenges is identifying the right semiconductor/insulator…

Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…

As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…

Metals are commonly used as electrostatic gates in devices due to their abundant charge carrier densities that are necessary for efficient charging and discharging. A semiconducting gate can be beneficial for certain fabrication processes,…

The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep-slope field-effect-transistor (FET). In addition to the selection of source material with desired density of states-energy…

Steep transistors are crucial in lowering power consumption of the integrated circuits. However, the difficulties in achieving steepness beyond the Boltzmann limit experimentally have hindered the fundamental challenges in application of…

Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore de-ionized (DI) water as a solution top gate for…

Studies involving nanomechanical motion have evolved from its detection and understanding of its fundamental aspects to its promising practical utility as an integral component of hybrid systems. Nanomechanical resonators' indispensable…

With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap…