Related papers: Low-energy domain wall racetracks with multiferroi…
Magnetic solitons offer functionalities as information carriers in multiple spintronic and magnonic applications. However, their potential for nanoscale energy transport has not been revealed. Here we demonstrate that antiferromagnetic…
Charge-neutral 180$^\circ$ domain walls that separate domains of antiparallel polarization directions are common structural topological defects in ferroelectrics. In normal ferroelectrics, charged 180$^\circ$ domain walls running…
Two-dimensional van der Waals heterostructures are potential game changers both in understanding the fundamental physics and in the realization of various devices that exploit magnetism at the nanoscale. Multiferroic heterostructures…
The spin-transfer torque motion of magnetic domain walls (DWs) in a CoB/Ni-based nanowire driven by a low current density of (1.12\pm0.8)\times10^{11} A m^{-2} has been observed indirectly by magnetotransport measurements. A high DW…
This paper analyzes how the ferroelectric properties of cubic-like BiFeO$_3$ nanoparticles are affected by different terminations and charge distributions at the surface using ab-initio-based atomistic computational experiments. Our…
Using ultrafast optical spectroscopy, we show that polaronic behavior associated with interfacial antiferromagnetic order is likely the origin of tunable magnetotransport upon switching the ferroelectric polarity in a…
The control of ferroelectric domain walls and their dynamics on the nanoscale becomes increasingly important for advanced nanoelectronics and novel computing schemes. One common approach to tackle this challenge is the pinning of walls by…
We present a circuit model to describe the electron transport through a domain wall in a ferromagnetic nanowire. The domain wall is treated as a coherent 4-terminal device with incoming and outgoing channels of spin up and down and the…
The antiferromagnetic topological insulator MnBi2Te4 (MBT) exhibits an ideal platform to study exotic topological phenomena and magnetic properties. The transport signatures of magnetic phase transitions in the MBT family materials have…
Of the new types of cryoelectronic devices under development, including phase shifters, giant magnetoresistance switches, diodes, transistors, and memory cells, some are based on hybrid superconductor-normal metal or…
Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics, and holds promise for human-interfacing applications. The prevailing mechanical approach is locally induced…
Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of…
The magnetization dynamics equation predicts that a domain wall that changes structure should undergo a displacement by itself - automotion - due to the relaxation of the linear momentum that is associated with the wall structure. We…
Energy-efficiency and design-complexity of high-speed on-chip and inter-chip data-interconnects has emerged as the major bottleneck for high-performance computing-systems. As a solution, we propose an ultra-low energy interconnect…
We demonstrate a direct correlation between the domain structure of multiferroic BiFeO3 thin films and exchange bias of Co0.9Fe0.1/BiFeO3 heterostructures. Two distinct types of interactions, an enhancement of the coercive field (exchange…
We have combined neutron scattering and piezoresponse force microscopy to study the relation between the exchange bias observed in CoFeB/BiFeO3 heterostructures and the multiferroic domain structure of the BiFeO3 films. We show that the…
Materials with antiferromagnetic order have recently emerged as promising candidates in spintronics based on their beneficial characteristics such as vanishing stray fields and ultra-fast dynamics. At the same time more complex localized…
Two-dimensional (2D) magnets have broad application prospects in the spintronics, but how to effectively control them with a small electric field is still an issue. Here we propose that 2D magnets can be efficiently controlled in a…
The magnetic field (or electric current) driven domain-wall motion in magnetic nanostripes is of considerable interest because it is essential to the performance of information storage and logic devices. One of the currently key problems is…
Multiferroics have received intense attention due to their great application potential in multi-state information storage devices and new types of sensors. Coupling among ferroic orders such as ferroelectricity, (anti-)ferromagnetism,…