Related papers: Low-energy domain wall racetracks with multiferroi…
In spiral multiferroics, magnetism induces ferroelectricity, thus holding a promise for novel memory devices where an electric field switches magnetic bits. However, such a switching process, in which magnetic domain walls are moved…
Low-energy antiferromagnetic phase transitions offer an appealing platform for low-power spintronic functionalities, yet their direct electrical access in insulating antiferromagnets remains challenging, particularly in the low-field regime…
A collective excitation of the spin structure in a magnetic insulator can transmit spin-angular momentum with negligible dissipation. This quantum of a spin wave, introduced more than nine decades ago, has always been manipulated through…
Magnetoelectric multiferroics, materials with intrinsically coupled electric polarization and magnetic order, promise ultralow-power switching, nonvolatile memory, and energy-efficient signal transduction. Yet practical deployment demands…
Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported…
Evidence from first-principles calculations indicates that excess electrons in BiFeO$_3$ form small polarons with energy levels deep inside the electronic band gap. Hence, $n$-type electronic transport could occur by hopping of small…
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has…
The realization of fully reconfigurable, voltage-controlled, and programmable on-chip magnonic devices is essential to fully harness the potential of spin waves for signal processing, logic and neuromorphic computing. Yet, existing…
The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information…
Intensive studies have been made on antiferromagnets as candidate materials for next generation memory bits due to their ultrafast dynamics reaching picosecond time scales. Recent demonstrations of electrical bidirectional switching of…
Conventionally, dc fields are used for switching dipole orientations in ferroelectrics. Such fields tilt the potential surface experienced by domain walls and thereby lower activation energies for their movement: escape from tilted…
The current-driven motion of magnetic domain walls (DWs) is the working principle of magnetic racetrack memories. In this type of spintronic technology, high current densities are used to propel DW motion in magnetic nanowires, causing…
In the quest to develop spintronic logic, it was discovered that magnetoelectric switching results in lower energy and shorter switching time than other mechanisms. Magnetoelectric (ME) field due to exchange bias at the interface with a…
BiFeO3 is a model multiferroic in which the ferroelectric polarization is coupled to ferroelastic lattice distortions, yet deterministic control of its domain structure remains limited by high switching fields and competing polarization…
Within the racetrack memory paradigm, systems exploiting magnetic guiding potentials instead of geometrical ones, allow for enhancing the versatility of the final devices adding magnetic reconfigurable capabilities. Hard/soft magnetic…
When electric and magnetic fields are applied together on a magnetoelectric antiferromagnet, the domain state is subject to reversal. Although the initial and final conditions are saturated single-domain states, the process of reversal may…
There is growing evidence that domain walls in ferroics can possess emergent properties that are absent in bulk materials. For example, 180 domain walls in the ferroelectric-antiferromagnetic BiFeO3 are particularly interesting because they…
The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for such…
Topologically distinct magnetic structures like skyrmions, domain walls, and the uniformly magnetized state have multiple applications in logic devices, sensors, and as bits of information. One of the most promising concepts for applying…
We report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 and Co…