Related papers: Low-energy domain wall racetracks with multiferroi…
We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, Bi2Se3. The ferromagnetic layer has perpendicular anisotropy, due to MgO deposited on the top surface of Fe.…
Among the recent discoveries of domain wall functionalities, the observation of electrical conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened exciting new possibilities. Here, we report evidence of…
Controlling magnetic moments using electric fields remains a central challenge in spintronics. Multiferroics, where magnetic and electric orders coexist, may be a natural platform for such control, but progress has been limited because…
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…
Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain…
The development of new computing technologies has given a new stimulus in the study of multiferroics. The use of multiferroics allows the realization of competitive energy efficient scalable logic and storage devices. The low-power…
Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr$_2$O$_3$ is used in the estimates of the materials parameters. It is found that the domain…
To face the challenges lying beyond current CMOS-based technology, new paradigms for information processing are required. Magnonics proposes to use spin waves to carry and process information, in analogy with photonics that relies on light…
Heavy metal/ferromagnetic layers with perpendicular magnetic anisotropy (PMA) have potential applications for high-density information storage in racetrack memories and nonvolatile magnetic random access memories. Writing and erasing of…
This paper reviews the recent developments on building nanoelectronics for our future information processing paradigm using multiferroic composites. With appropriate choice of materials, when a tiny voltage of few tens of millivolts is…
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…
Electronic conduction along individual domain walls (DWs) has been reported in BiFeO$_3$ (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains)…
The authors show that the magnetization of a magnetostrictive/piezoelectric multiferroic single-domain shape-anisotropic nanomagnet can be switched with very small voltages that generate strain in the magnetostrictive layer. This can be the…
This paper reports on the temperature evolution of local elastic interactions between ferromagnetic CoFe films and ferroelectric BaTiO3 substrates. Polarization microscopy measurements indicate that growth-induced stripe domains in the CoFe…
Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics. The multiferroic phenomena in two-dimensional materials is…
CoFeB is a very soft material, in which Domain Wall (DW) can be moved easily under a weak magnetic field. However, it is very difficult to move DWs in Ta\CoFeB\MgO nanowires with interfacial perpendicular magnetic anisotropy through a…
We use spin polarized low energy electron microscopy to investigate domain pattern transfer in a multiferroic heterostructure consisting of a $(111)$-oriented BaTiO$_{\mathrm{3}}$ substrate and an epitaxial Ni film. After in-situ thin film…
Materials with long-range order like ferromagnetism or ferroelectricity exhibit uniform, yet differently oriented three-dimensional regions called domains that are separated by two-dimensional topological defects termed domain…
Interfaces at the two-dimensional limit in oxide materials exhibit a rich span of functionality that differs significantly from the bulk behavior. Among such interfaces, domain walls in ferroelectrics draw special attention because they can…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…