Related papers: Low-energy domain wall racetracks with multiferroi…
We report on the formation of topological defects emerging from the cycloidal antiferromagnetic order at the surface of bulk BiFeO$_3$ crystals. Combining reciprocal and real-space magnetic imaging techniques, we first observe, in a single…
Domain walls in ferromagnetic nanowires are potential building-blocks of future technologies such as racetrack memories, in which data encoded in the domain walls are transported using spin-polarised currents. However, the development of…
We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric GaFeO3. Piezo-force measurements show a 180o phase shift of piezoresponse upon switching the electric field indicating nanoscale…
Epitaxial strain has emerged as a powerful tool to tune magnetic and ferroelectric properties in functional materials such as in multiferroic perovskite oxides. Here, we use first-principles calculations to explore the evolution of magnetic…
Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic…
Multiferroics permit the magnetic control of the electric polarization and electric control of the magnetization. These static magnetoelectric (ME) effects are of enormous interest: The ability to read and write a magnetic state…
The controlled propagation of spin textures at bifurcations is a critical challenge for racetrack-based logic devices. Here, we investigate the effect of longitudinal and transverse magnetic fields on the propagation of magnetic…
Recent studies have predicted extraordinary properties for transverse domain walls in cylindrical nanowires: zero depinning current, the absence of the Walker breakdown, and applications as domain wall oscillators. In order to reliably…
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
Robust multi-level spin memory with the ability to write information electrically is a long-sought capability in spintronics, with great promise for applications. Here we achieve nonvolatile and highly energy-efficient magnetization…
Ferroelectrics are essential in low-dimensional memory devices for multi-bit storage and high-density integration. A polar structure is a necessary premise for ferroelectricity, mainly existing in compounds. However, it is usually rare in…
Transition metal oxides hold great potential for the development of new device paradigms because of the field-tunable functionalities driven by their strong electronic correlations, combined with their earth abundance and environmental…
Altermagnets represent a novel magnetic phase with transformative potential for ultrafast spintronics, yet efficient control of their magnetic states remains challenging. We demonstrate an ultra-low-power electric-field control of…
Ferroic materials are well known to exhibit heterogeneity in the form of domain walls. Understanding the properties of these boundaries is crucial for controlling functionality with external stimuli and for realizing their potential for…
Multiferroic perovskites that exhibit room temperature magnetization and polarization have immense potential in the next generation of magneto-electric and spintronic memory devices. In this work, the magnetic and ferroelectric properties…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
Ferroelectric switching in BiFeO$_3$ multiferroic thin films with intrinsic ``stripe-like'' and ``bubble-like'' polydomain configurations was studied by piezoresponse force microscopy. Using the local electric field applied by a scanning…
Ferroelectric domain structures, separated by domain walls, often display unconventional physics and hold significant potential for applications in nano-devices. Most naturally growth domain walls are charge-neutral to avoid increased…
In superconductors, the combination of broken time-reversal and broken inversion symmetries can result in a critical current being dependent on the direction of current flow. This phenomenon is known as superconducting diode effect (SDE)…
Hafnium dioxide (HfO2) is a promising ferroelectric (FE) material for achieving high-density nonvolatile memory and neuromorphic computing, due to its compatibility with the mainstream integrated circuit technology and the surprisingly…