Related papers: LPCVD based Plasma Damage Free in situ etching of …
Gallium oxide (Ga$_2$O$_3$) has attracted significant interest for its unique potential especially in power electronics. However, its low and anisotropic thermal conductivity poses a major challenge for heat dissipation. Here, we explore an…
Molecular beam epitaxy is one of the highest quality growth methods, capable of achieving theoretical material property limits and unprecedented device performance. However, such ultimate quality usually comes at the cost of painstaking…
We focus on the Gibbs free energy $\Delta G$ for nucleating a droplet of the stable phase (e.g. solid) inside the metastable parent phase (e.g. liquid), close to the first-order transition temperature. This quantity is central to the theory…
Gas Electron Multiplier (GEM) detectors are crucial for enabling high-resolution X-ray polarisation of astrophysical sources when coupled to custom pixel readout ASIC in Gas Pixel Detectors (GPD), as in the Imaging X-ray Polarimetry…
This thesis was focused on the surface modification with plasma discharge. Austenitic AISI 316L stainless steel sample was carburised under different experimental conditions and mechanical properties have been studied (thickness, lattice…
Rutile Germanium Dioxide (r-GeO$_2$) has been identified as an ultrawide bandgap (UWBG) semiconductor recently, featuring a bandgap of 4.68 eV, comparable to Ga$_2$O$_3$ but offering bipolar dopability, higher electron mobility, higher…
The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs…
Based on first-principles calculations, we show that the maximum reachable concentration $x$ in the (Ga$_{1-x}$In$_x$)$_2$O$_3$ alloy in the low-$x$ regime (i.e. In solubility in $\beta$-Ga$_2$O$_3$) is around 10%. We then calculate the…
Steep-slope $\beta$-Ga$_2$O$_3$ nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric stack. Subthreshold slope less than 60 mV/dec at room…
The linear and nonlinear evolutions of the tearing instability in a collisionless plasma with a strong guide field are analyzed on the basis of a two-field Hamiltonian gyrofluid model. The model is valid for a low ion temperature and a…
Vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes (SBDs) were fabricated on single-crystal substrates grown by edge-defined film-fed growth (EFG) method. High resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM)…
Reduced fluid models including electron inertia and ion finite Larmor radius corrections are derived asymptotically, both from fluid basic equations and from a gyrofluid model. They apply to collisionless plasmas with small ion-to-electron…
The texturization of poly(tetrafluoroethylene) (PTFE) surfaces is achieved at atmospheric pressure by using the post-discharge of a radio-frequency plasma torch supplied in helium and oxygen gases. The surface properties are characterized…
Ultrawide bandgap semiconductor gallium oxide (Ga2O3) and its polymorphs have recently attracted increasing attention across physics, materials science, and electronics communities. In particular, the self-organized formation of the…
Solid phase epitaxy is a crystallization technique used to produce high quality thin films. Lateral solid phase epitaxy furthermore enables the realization of non-planar structures, which are interesting, e.g., in the field of spintronics.…
Level set method, introduced by Osher and Sethian [1], is a highly robust and accurate computational technique for tracking of moving interfaces in etching, deposition and photolithography processes. It originates from the idea to view the…
We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $\beta$-Ga$_2$O$_3$ and $\beta$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on…
Understanding the sticking coefficient $\sigma$, i.e., the probability of an adatom sticking to a surface, is essential for controlling the stoichiometry during epitaxial film growth. However, $\sigma$ on monolayer graphene-covered surfaces…
Ga2O3 thin films were deposited by reactive magnetron sputtering from a liquid gallium target. The influence of deposition temperature, substrate type, and discharge parameters on the structural and electrical properties was systematically…
We have produced thick-foil and fine-pitch gas electron multipliers (GEMs) using a laser etching technique. To improve production yield we have employed a new material, Liquid Crystal Polymer, instead of polyimide as an insulator layer. The…