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${\beta}$-Ga${_2}$O${_3}$ based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these…
We report the growth of epitaxial LaInO3 on DyScO3(110) substrates by adsorption-controlled plasma-assisted molecular beam epitaxy (PA-MBE). The adsorption-controlled growth was monitored using line-of-sight quadrupole mass spectrometry. In…
In recent years, rapid progress has been made in solid-state lithium batteries. Among various technologies, coating the surface of electrodes or electrolytes has proven to be an effective method to enhance interfacial stability and improve…
This study examines the phase transitions occurring during linear heating of the Zr15Nb alloy through a comprehensive, multi-technique methodology comprising in-situ high-energy synchrotron X-ray diffraction (HEXRD), electrical resistance…
Using ab initio evolutionary structure prediction method in conjunction with density functional theory, we performed a systematic investigation on the structural transition of elemental scandium under pressure up to 250 GPa. Our prediction…
A comprehensive study of drain current dispersion effects in $\beta$-Ga$_2$O$_3$ FETs has been done using DC, pulsed and RF measurements. Both virtual gate effect in the gate-drain access region and interface traps under the gate are most…
1.5D PIC, relativistic, fully electromagnetic (EM) simulations are used to model EM wave emission generation in the context of solar type III radio bursts. The model studies generation of EM waves by a super-thermal, hot beam of electrons…
Elemental gallium can exist in several phases under ambient conditions. The stable $\alpha$ phase has a superconducting transition temperature, $T_c$, of 0.9~K. By contrast, the $T_c$ of the metastable $\beta$ phase is around 6~K. To…
Magnetic reconnection is an important physical process in various explosive phenomena in the universe. In the previous studies, it was found that fast re- connection takes place when the thickness of a current sheet becomes on the order of…
Gallium oxide is a wide-bandgap semiconductor which has been steadily growing in popularity due to its ultra-wide bandgap, suitability for harsh environments and distinctive opto-electrical properties. Notable applications include deep-UV…
We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature range from 270{\deg}C to 500{\deg}C, allowing a wide range of tunability of the nanohole density. By leveraging the low vapor pressure of Sb, we can…
Niobium nitride (NbN) is a metallic superconductor that is widely used for superconducting electronics due to its high transition temperature ($T_c$) and kinetic inductance. Processing-induced damage negatively affects the performance of…
This work reports the peculiar properties of a graphene film prepared by the chemical vapor deposition (CVD) of ethylene in high vacuum on a well oriented and carefully cleaned Pt(111) crystal surface maintained at high temperature. In-situ…
Using particle-in-cell (PIC) simulation technique, the effect of gas pressure (5-500 mTorr) on the plasma spatial asymmetry, ionization rate, metastable gas densities profile, electron energy distribution function and higher harmonics…
A few theoretical models predict Fe to display both ferromagnetic and antiferromagnetic phases, depending on the volume of the unit cell. A proper choice of the substrate allows the growth of thin Fe overlayers with structures different…
Recently-demonstrated high-quality three-dimensional (3D) subsurface laser processing inside crystalline silicon (c-Si) wafers opens a door to a wide range of novel applications in multidisciplinary research areas. Using this technique, a…
The extraordinary ability of space-charge waves in plasmas to accelerate charged particles at gradients that are orders of magnitude greater than in current accelerators has been well documented. We develop a phenomenological framework for…
We report the fabrication of nanostructures from the quasi-two-dimensional electron gas (q2DEG) formed at the LaAlO$_{3}$/ SrTiO$_{3}$ (LAO/STO) interface. The process uses electron beam lithography in combination with reactive ion etching.…
Lead-free Cs$_3$Cu$_2$X$_5$ (X = Cl, Br, I) halides exhibit high photoluminescence quantum yields and excellent ambient stability, yet light-emitting devices based on these materials remain limited by poor optical outcoupling. In this work,…
Scanning Helium Microscopy (SHeM) offers a combination of spatial and angular resolution via a pinhole-collimated beam of thermal energy, neutral helium-4 atoms for non-destructive imaging. This thesis introduces a novel 3D imaging mode,…