Related papers: LPCVD based Plasma Damage Free in situ etching of …
The high frequency performance and yield of III-V semiconductor devices such as InP HEMTs is negatively impacted by subsurface etch damage and non-uniform etch depth over the wafer. Atomic layer etching (ALE) has the potential to overcome…
The chemical, structural, mechanical, and dynamical stabilities of the $\alpha$- and $\beta$-Ga$_2$O$_3$ are confirmed from respective negative formation energies, negative cohesive energies, favorable elastic constants, and positive phonon…
Gallium oxide (Ga2O3) can be crystallized in several polymorphs exhibiting different physical properties. In this work, polymorphic structures consisting of the cubic defective spinel (gamma) film on the top of the monoclinic (beta)…
We employ a relativistic transport theory to describe the fireball expansion of the matter created in ultra-relativistic heavy-ion collisions (uRHICs). Developing an approach to fix locally the shear viscosity to entropy density $\eta/s$,…
The epitaxial growth of technically-important $\beta$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching…
Durable delustered PET (PET-TiO2) fabrics super hydrophilic surface has been obtained by plasma selecting etching. The aging effect of their hydrophilicity after plasma treatment has been investigated with storage time. After Ar/O2 radio…
Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The…
In this work, we report on the growth of high-mobility $\beta$-Ga$_2$O$_3$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window for metalorganic vapor phase epitaxy. Low-temperature…
This paper reports on the deposition of amorphous and crystalline thin films of Ga2O3 by reactive pulsed direct current magnetron sputtering from a liquid gallium target onto fused (f-) quartz and c plane (c-) sapphire substrates, where the…
Herein, an effort has given to sheds light on the effects of plasma process parameters on the growth of vertical graphene nanosheets (VGNs) by plasma enhanced chemical vapor deposition (PECVD. The parameters include substrate temperature,…
The aim of the study is to analyze the stability of the Energetic Particle Modes (EPM) and Alfven Eigenmodes (AE) in Helitron J and LHD plasma if the electron cyclotron current drive (ECCD) is applied. The analysis is performed using the…
Plasmas generated using energetic electron beams are well known for their low electron temperature ($T_{e}$) and plasma potential, which makes them attractive for atomic-precision plasma processing applications such as atomic layer etch and…
\b{eta}-Ga2O3 is a promising candidate for next-generation semiconductors, but is limited by its intrinsic brittleness, which hinders its application in flexible electronics and high-precision devices. This study explores a new approach to…
The topological properties of gapped graphene have been explored for valleytronics applications. Prior transport experiments indicated their topological nature through large nonlocal resistance in Hall-bar devices, but the origin of this…
The III-Se layered semiconductors, including InSe and GaSe, are promising optoelectronic materials due to their relatively high electron mobilities at room temperature, nonlinear optical responses, ferroelectricity, self-passivated van der…
We present large-scale molecular dynamics (MD) simulations based on a machine-learning interatomic potential to investigate the wet etching behavior of various GaN facets in alkaline solution-a process critical to the fabrication of…
The question of optical bandgap anisotropy in the monoclinic semiconductor $\beta$-Ga2O3 was revisited by combining accurate optical absorption measurements with theoretical analysis, performed using different advanced computation methods.…
As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits given by quantum mechanics. Thus, two-dimensional (2D) structures appear as one of the best solutions to meet the…
In this work we derive the state of strain or stress under symmetry conserving conditions in pseudomorphic lattices with monoclinic symmetry. We compare surface vectors across the template epitaxial layer interface and impose conditions of…
$\beta$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the…