Related papers: Fully Tunable Strong Spin-Orbit Interactions in Li…
The selective confinement of light-holes (LHs) is demonstrated by introducing a low-dimensional system consisting of highly tensile-strained Ge quantum well enabling the design of an ultrafast gate-defined spin qubit under the electric…
The spin-orbit interaction (SOI) in zincblende semiconductor quantum wells can be set to a symmetry point, in which spin decay is strongly suppressed for a helical spin mode. Signatures of such a persistent spin helix (PSH) have been probed…
Spin qubits in semiconductor quantum dots offer a gate-tunable platform for quantum information processing. While two-qubit interactions are typically realized through exchange coupling between neighboring spins, coupling spin qubits to…
The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the…
We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity…
The coupling of spin and electronic degrees of freedom via the spin-orbit interaction (SOI) is an essential ingredient for many proposed future technologies. However, probing the strength and nature of SOI is a significant challenge,…
Spin-orbit coupling (SOC) is a key interaction in spintronics, allowing an electrical control of spin or magnetization and, vice versa, a magnetic control of electrical current. However, recent advances have revealed much broader…
We have fabricated epitaxial films of CeTiO3 (CTO) on (001)oriented SrTiO3(STO) substrates, which exhibit highly insulating and diamagnetic properties. X-ray photoelectron spectroscopy (XPS) was to establish the 3+ valence state of the Ve…
Flat bands are of extreme interest in a broad spectrum of fields since given by their high degeneracy, a small perturbation introduced in the system is able to push the ground state in the direction of an ordered phase of interest. Hence…
We theoretically explore Josephson diode effect (JDE) in superconductor/quantum dot (QD)/superconductor junction in the presence of a magnetic field and Rashba spin-orbit interaction (RSOI). We calculate the Josephson current in our QD…
Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of particular interest for scalable quantum information…
We show that the spin-orbit interaction (SOI) arising due to the in-plane electric field of the Coulomb repulsion between electrons in a two-dimensional quantum well produces an attractive component in the pair interaction Hamiltonian that…
We investigate the superconductivity in two-dimensional electron systems formed in SrTiO3 nanostructures. Our the- oretical analysis is based on the three-orbital model, which takes into account t2g orbitals of Ti ions. Because of the…
In a one-dimensional weak-link wire the spin-orbit interaction (SOI) alone cannot generate a nonzero spin current. We show that a Zeeman field acting in the wire in conjunction with the Rashba SOI there does yield such a current, whose…
The electronic and optical properties of a GaAs quantum ring (QR) with few electrons in the presence of the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI) have been investigated theoretically.…
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to…
Precise gap structure in LiFeAs (Tc = 18 K) given by ARPES studies offers us significant information to understand the pairing mechanism in iron-based superconductors. The most remarkable characteristics in LiFeAs gap structure would be…
Our recent study [Phys. Rev. B 103, 085309 (2021)] verified the existence of $\bf{k}$-linear Rashba spin-orbit coupling (SOC) of two-dimensional hole gases in quantum wells (QWs) which originates from a combination of heavy-hole-light-hole…
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…
We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (100) surface. The coherence and phase sensitivity…