Related papers: Fully Tunable Strong Spin-Orbit Interactions in Li…
We develop an effective tight-binding Hamiltonian for spin-orbit (SO) interaction in bent carbon nanotubes (CNT) for the electrons forming the $\pi$ bonds between the nearest neighbor atoms. We account for the bend of the CNT and the…
Spin dephasing via the spin-orbit interaction (SOI) is a major mechanism limiting the electron spin lifetime in III-V zincblende quantum wells. The dephasing can be suppressed in GaAs(111) quantum wells by applying an electric field. The…
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…
The coexistence of Rashba and Dresselhaus spin-orbit interactions (SOIs) in semiconductor quantum wells leads to an anisotropic effective field coupled to carriers' spins. We demonstrate a gate-controlled anisotropy in Aharonov-Casher (AC)…
Spin-orbit coupling (SOC) relates to the interaction between an electron's motion and its spin, and is ubiquitous in solid-state systems. Although the effect of SOC in normal-state phenomena has been extensively studied, its role in…
We show electric field control of the spin accumulation at the interface of the oxide semiconductor Nb-SrTiO$_{3}$ with Co/AlO$_{x}$ spin injection contacts at room temperature. The in-plane spin lifetime $\tau_\parallel$ as well as the…
Solid state spin qubits are promising candidates for the realization of a quantum computer due to their long coherence times and easy electrical manipulation. However, spin-spin interactions, which are needed for entangling gates, have only…
We theoretically study graphene nanoribbons in the presence of spatially varying magnetic fields produced e.g. by nanomagnets. We show both analytically and numerically that an exceptionally large Rashba spin orbit interaction (SOI) of the…
Recent ferromagnetic resonance experiments and theory of Pt/Nb/Ni8Fe2 proximity-coupled structures strongly suggest that spin-orbit coupling (SOC) in Pt in conjunction with a magnetic exchange field in Ni8Fe2 are the essential ingredients…
Ballistic transport through nanoscale devices with time-dependent Rashba-type spin-orbit interaction (SOI) can lead to spin-polarized wave packets that appear even for completely unpolarized input. The SOI that oscillates in a finite domain…
Spintronics is aimed at active controlling and manipulating the spin degrees of freedom in semiconductor devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction…
We consider the electron transport in the Datta-Das spin transistor within the two-subband model taking into account the intra- and inter-subband spin-orbit (SO) interaction and study the influence of the inter-subband SO coupling on the…
We investigate the spin-orbit (s-o) interaction in two-dimensional electron gases (2DEGs) in quantum wells with two subbands. From the $8\times 8$ Kane model, we derive a new inter-subband-induced s-o term which resembles the functional…
We propose a setup for universal and electrically controlled quantum information processing with hole spins in Ge/Si core/shell nanowire quantum dots (NW QDs). Single-qubit gates can be driven through electric-dipole-induced spin resonance,…
Holes in germanium (Ge) exhibit strong spin-orbit interaction, which can be exploited for fast and all-electrical manipulation of spin states. Here, we report transport experiments in a tunable Ge hut wire hole double quantum dot. We…
We derive the ac spin-Hall conductivity $\sigma_{\rm sH}(\omega)$ of two-dimensional spin-orbit coupled systems interacting with dispersionless phonons of frequency $\omega_0$. For the linear Rashba model we show that the electron-phonon…
The third-rank tensor of the static spin Hall conductivity is investigated for two-dimensional (2D) topological insulators by electronic structure calculations. Its seeming quantization is numerically demonstrated for highly symmetric…
The phenomenon originating from spin-orbit coupling (SOC) provides energy-efficient strategies for spin manipulation and device applications. The broken inversion symmetry interface and resulting electric field induce a Rashba-type…
Introduction of spin-orbit interaction (SOI) into graphene with weak hydrogenation ($\sim$0.1\%) by dissociation of hydrogen silsesquioxane resist has been confirmed through the appearance of inverse spin Hall effect. The spin current was…
Gate-induced modulation of the spin-orbit interaction (SOI) in a 1.5 nm-thick Pd thin film grown on a ferrimagnetic insulator was investigated. Efficient charge accumulation by ionic gating enables a substantial upshift in the Fermi level…