Related papers: Silicon Nitride Microresonator Raman Lasers
Silicon photonics lacks a second-order nonlinear optical response in general because the typical constituent materials are centro-symmetric and lack inversion symmetry, which prohibits second-order nonlinear processes such as second…
Lithium niobate (LN), an outstanding and versatile material, has influenced our daily life for decades: from enabling high-speed optical communications that form the backbone of the Internet to realizing radio-frequency filtering used in…
Silicon nitride membranes are a powerful and ubiquitous optomechanical resonator technology, enabling high mechanical Q, low optical loss, and enhanced optomechanical coupling via a panoply of strain-, phononic-, and photonic-crystal…
The nonlinear optical radiation of an integrated lithium niobate microcavity is demonstrated, which has been neglected in previous studies of nonlinear photonic devices. We find that the nonlinear coupling between confined optical modes on…
Besides being the foundational material for microelectronics, in optics, crystalline silicon has long been used for making infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of…
On-chip optical resonators have the promise of revolutionizing numerous fields including metrology and sensing; however, their optical losses have always lagged behind their larger discrete resonator counterparts based on crystalline…
Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, and…
Microelectronic integration is a key enabler for the ubiquitous deployment of devices in large volumes ranging from MEMS and imaging sensors to consumer electronics. Such integration has also been achieved in photonics, where compact…
Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin…
We report a detailed study of the strong near-field Raman scattering enhancement which takes place in tip-enhanced Raman scattering (TERS) in indium nitride. In addition to the well-known first-order optical phonons of indium nitride,…
Complex 3D integration of photonic and electronic integrated circuits is of particular interest to carry the photonics roadmap and to address challenges but involves mechanical stress, often detrimental for the behavior of optical…
Photonic integrated circuits that exploit nonlinear optics in order to generate and process signals all-optically have achieved performance far superior to that possible electronically - particularly with respect to speed. Although…
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence,…
The integration of second-order optical nonlinearities into scalable photonic platforms remains a key challenge due to their large sensitivity to fabrication variations. Here, we present a scalable quadratic nonlinear platform that…
Aluminum nitride and silicon nitride have recently emerged as important nonlinear optical materials in integrated photonics respectively for their quadratic and cubic optical nonlinearity. A composite aluminum nitride and silicon nitride…
The interaction between photons and phonons plays a crucial role in broad areas ranging from optical sources and modulators to quantum transduction and metrology. The performance can be further improved using integrated photonic-phononic…
Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have…
Acousto-optic modulation in photonic integrated circuits harness the applications that include signal processing, quantum photonics and microwave photonics. However, silicon nitride ($\rm{Si_3N_4}$), as a main-stream low-loss scalable…
Strain engineering in semiconductor transistor devices has become vital in the semiconductor industry due to the ever increasing need for performance enhancement at the nanoscale. Raman spectroscopy is a non-invasive measurement technique…
This study presents a comprehensive investigation into the exceptional superconducting attributes of titanium nitride (TiN) achieved through plasma-enhanced atomic layer deposition (PEALD) on both planar and intricate three-dimensional (3D)…