Stress measurements in silicon photonics by integrated Raman spectroscopy
Abstract
Complex 3D integration of photonic and electronic integrated circuits is of particular interest to carry the photonics roadmap and to address challenges but involves mechanical stress, often detrimental for the behavior of optical components. Existing experiments failed to carefully analyze the stress in such integrated optical devices due to the requirement in terms of feature sizes, few hundreds of nanometers, and 3D-stacked integration. We present for the first time the characterization of the stress tensor of a silicon waveguide using Integrated Raman Spectroscopy (IRS). This experimental technique is directly sensitive to the effective stress, which involves changes in optical properties of the guided mode, at the working wavelength and polarization state of the photonic component. The experimental stress tensor is in good agreement with simulations.
Keywords
Cite
@article{arxiv.2012.13336,
title = {Stress measurements in silicon photonics by integrated Raman spectroscopy},
author = {Guillaume Marcaud and Mathias Berciano and Christian Lafforgue and Carlos Alonso-Ramos and Xavier Le Roux and Thomas Maroutian and Guillaume Agnus and Pascal Aubert and Ludovic Largeau and Eric Cassan and Sylvia Matzen and Delphine Marris-Morini and Philippe Lecoeur and Laurent Vivien},
journal= {arXiv preprint arXiv:2012.13336},
year = {2020}
}