Related papers: Electron mobility in AlN from first principles
GeSn has emerged as a promising material for spintronics due to its long spin-lifetime, compatibility with silicon technology, high mobility and tunable electronic properties. Of particular interest is the transition from an indirect to a…
Iron-based high temperature superconductivity develops when the `parent' antiferromagnetic/orthorhombic phase is suppressed, typically by introduction of dopant atoms. But their impact on atomic-scale electronic structure, while in theory…
Quasi-one dimensional electron systems have been created using a suspended helium film on a structured substrate. The electron mobility along the channel is calculated by taking into account the essential scattering processes of electrons…
In polarizable materials, electronic charge carriers interact with the surrounding ions, leading to quasiparticle behaviour. The resulting polarons play a central role in many materials properties including electrical transport, optical…
We present a first principles based model of electron-phonon scattering mechanisms and thermoelectric transport at the L and $\Sigma$ valleys in <200b>$p$-type PbTe, accounting for their thermally induced shifts. Our calculated values of…
The flow of charge and entropy in solids usually depends on collisions decaying quasiparticle momentum. Hydrodynamic corrections can emerge, however, if most collisions among quasiparticles conserve momentum and the mean-free-path…
\textit{DX} behavior limits $n$-type carrier concentrations in ultrawide-bandgap nitrides such as aluminum nitride (AlN) and cubic boron nitride ($c$-BN). Instead of acting as effective-mass donors, \textit{DX} centers capture two…
The role of electron-phonon scattering in finite-temperature anomalous Hall effect is still poorly understood. In this work, we present a Boltzmann theory for the side-jump contribution from electron-phonon scattering, which is derived from…
Alkali-doped fullerides A$_n$C$_{60}$ show a remarkably wide range of electronic phases in function of A= Li, Na, K, Rb, Cs and the degree of doping, $n=1-5$. While the presence of strong electron correlations is well established, recent…
The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied…
We report on experimental study of the effect of disorder on electronic parameters and inelastic scattering mechanisms in ultrathin superconducting NbN films, which are commonly used in single-photon detectors. An increase in disorder in…
Aluminum nitride (AlN) is an important piezoelectric material for a wide range of applications, many efforts are devoted to improving its piezoelectric response by alloying with transition metals (TMs). In this paper, the influence of the…
The monolayer of black phosphorous, or phosphorene, has recently emerged as a new 2D semiconductor with intriguing highly anisotropic transport properties. Existing calculations of its intrinsic phonon-limited electronic transport…
The combined effect of electron-electron interactions and spin-orbit scattering in metal nanoparticles can be studied by measuring splitting of electron levels in magnetic field ($g$ factors) in tunneling spectroscopy experiments. Using…
We evaluate the degree of disorder in electrolyte gating devices through the transport measurements in graphene. By comparing the mobility in ion- and standard metal-gated devices, we show that the deposition of the ionic liquid introduces…
We present a novel theory of charge-carrier mobilities in organic molecular crystals of high purity. Our approach is based on Holstein's original concept of small-polaron bands but generalized with respect to the inclusion of nonlocal…
Finite temperature effects have a pronounced impact on the transport properties of solids. In magnetic systems, besides the scattering of conduction electrons by impurities and phonons, an additional scattering source coming from the…
Achieving efficient n-type doping in AlN, a representative ultrawide bandgap (UWBG) semiconductor, remains a longstanding challenge that limits its application in high-power electronics and deep-ultraviolet optoelectronics. Conventional…
This abstract presents an aluminum nitride (AlN) piezoelectric actuator for tuning optical resonance modes of silicon nitride photonic resonators. The AlN actuator is fabricated on top of a thick silicon dioxide cladding that encapsulates…
We have studied the thermal properties of atom chips consisting o high thermal conductivity Aluminum Nitride (AlN) substrates on which gold microwires are directly deposited. We have measured the heating of wires of several widths and with…