Related papers: Electron mobility in AlN from first principles
We present a comprehensive investigation of semi-classical transport properties of n-type ternary compound AlGaAs2, using Rode's iterative method. Four scattering mechanisms, have been included in our transport calculation, namely, ionized…
Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range…
We theoretically study the acoustic phonon limited mobility in n-doped two-dimensional MoS2 for temperatures T < 100 K and high carrier densities using the Boltzmann equation and first-principles calculations of the acoustic electron-phonon…
Room-temperature metallicity of lightly doped SrTiO$_3$ is puzzling, because the combination of mobility and the effective mass would imply a mean-free-path (mfp) below the Mott Ioffe Regel (MIR) limit and a scattering time shorter than the…
In the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (Fe-N) thin films. Fe-N thin films with different concentration of Al (Al=0, 2, 3, 6, and 12 at.%) were deposited using dc…
Considering scattering by unintentional background charged impurities and by charged dopants in the modulation doping layer as well as by GaAs acoustic phonons, we theoretically consider the practical intrinsic (phonons) and extrinsic…
The ab-initio theory of charge transport in semiconductors typically employs the lowest-order perturbation theory in which electrons interact with one phonon (1ph). This theory is accepted to be adequate to explain the low-field mobility of…
A first-principles investigation of the electron-phonon interaction in the recently synthesized osmium dinitride (OsN$_2$) compound predicts that the material is a superconductor. Superconductivity in OsN$_2$ would originate from the…
Rare-earth nickelates R$^{3+}$Ni$^{3+}$O$_3$ (R=Lu-Pr, Y) show a striking metal-insulator transition in their bulk phase whose temperature can be tuned by the rare-earth radius. These compounds are also the parent phases of the newly…
We reported a new result of the neutral impurity scattering of holes that has impact on the charge drift mobility in high purity p-type germanium crystals at 77 Kelvin. The charge carrier concentration, mobility and resistivity are measured…
Both the semi-classical and quantum transport properties of F-doped SnO$_2$ thick films ($\sim$1\,$\mu$m) were investigated experimentally. It is found that the resistivity caused by the thermal phonons obeys Bloch-Gr\"{u}neisen law from…
Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for…
We study the thermoelectric properties of bulk $MoSe_2$ within relaxation time approximation including electron-phonon and ionized impurity interactions using first-principles calculations at room temperatures. The anisotropy of this…
Recent experiment reports that high thermal conductivity of ~1000 W/mK is observed in cubic boron arsenide crystal (BAs). In order to expand the scope of future applications, we use first-principles calculations to investigate the…
We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures, magnetic fields and electron densities. We find a magnetoconductance peak around B = 0. With…
We combine first-principles calculations and Boltzmann transport theory to study the electrical transport properties of intermetallic compound YbAl3. To accurately predict the electronic relaxation time, we use the density functional…
We use first-principles electronic structure methods to calculate the electronic thermoelectric properties (i.e. due to electronic transport only) of single-crystalline bulk $n$-type silicon-germanium alloys vs Ge composition, temperature,…
The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and…
We study the effect of electron-phonon interactions on the electrical conductance of a helical edge state of a two-dimensional topological insulator. We show that the edge deformation caused by bulk acoustic phonons modifies the spin…
The semiconductor BAs has drawn significant interest due to experimental reports of simultaneous high thermal conductivity and ambipolar charge mobility. The \textit{ab~initio} prediction of high electron and hole mobility assumed the…