Related papers: Electron mobility in AlN from first principles
We show that individual dopant atoms dominate the transport characteristics of nanometer sized devices, by investigating metal semiconductor diodes down to 15 nm diameter. Room temperature measurements reveal a strongly increasing scatter…
In this work, the effect of electron-phonon (e-ph) coupling on both electron and phonon transport of metals is investigated via first principles calculations. A Monte-Carlo (MC) approach for solving the coupled electron-phonon Boltzmann…
Nitrogen vacancy doped SmN$_{1-\delta}$ is a semiconductor which lies in the intermediary between insulating-ferromagnetic SmN and metallic-anti-ferromagnetic Sm. The dopant electrons resulting from nitrogen vacancies have recently been…
Mid-infrared optical Hall effect measurements are used to determine the free charge carrier parameters of an unintentionally doped wurtzite-structure $c$-plane oriented In$_{0.33}$Ga$_{0.67}$N epitaxial layer. Room temperature electron…
When impurity and phonon scattering coexist, the Boltzmann equation has been solved accurately for nonlinear electron transport in a quantum wire. Based on the calculated non-equilibrium distribution of electrons in momentum space, the…
Ab-initio electron - liquid phase xenon fully differential cross-sections for electrons scattering in liquid xenon are developed from a solution of the Dirac-Fock scattering equations, using a recently developed framework [1] which…
Electron transport in Ge at various temperatures down to 20 mK has been investigated using particle Monte Carlo simulation taking into account ionized impurity and inelastic phonon scattering. The simulations account for the essential…
Electron mobility, energy spectra and intrinsic carrier concentrations in the n-type Hg0.32Cd0.68Te / Hg1-xCdxTe / Hg0.32Cd0.68Te quantum well (QW) in semi-metallic state are numerically modeled. Energy spectra and wave functions were…
The electronic behavior of various solid metals (Al, Ni, Cu, Au, Ti, and W) under ultrashort laser irradiation is investigated by means of density functional theory. Successive stages of extreme nonequilibrium on picosecond time scale…
Ternary intermetallic half-Heusler (HH) compounds (XYZ) with 18 valence electron count viz. ZrCoSb, ZrNiSn, and ZrPdSn, have revealed promising thermoelectric properties. Exemplarily, it has been experimentally observed that a slight change…
Temperature dependencies for concentration and the Hall mobility of electrons for the $\textit{n}$-$\text{Ge} \langle \text{Sb}\rangle$ and \linebreak $\textit{n}$-$\text{Ge} \langle \text{Sb, Au}\rangle$ single crystals uniaxially deformed…
Metallic transition-metal nitrides (TMNs) are promising conductive ceramics for many applications, whose thermal transport is of great importance in device design. It is found metallic TiN and HfN hold anomalous thermal transport behaviors…
The theory of the interaction of electrons with acoustic phonons in multilayer nitride-based AlN/GaN nanostructures was developed for the first time at $T\geqslant 0$ using the method of finite-temperature Green's functions and Dyson…
We use unpolarized and polarized neutron scattering to study the temperature and polarization dependence of low-energy magnetic fluctuations in nearly-optimal-doped NaFe$_{0.9785}$Co$_{0.0215}$As, with coexisting superconductivity ($T_{\rm…
We have investigated electron transport in Nb doped SrTiO$_3$ single crystals for two doping densities. We find that the resistivity and mobility are temperature dependent in both whereas the carrier concentration is almost temperature…
The measurement of the electronic structure of metal alloys is hampered by the in-applicability of conventional quantum oscillation measurements owing to electron scattering by thermal or alloy disorder. Recent advancements in the study of…
We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex…
In this paper, we present a study of the effects of temperature on the electron mobility in InAs/GaSb type-II superlattices (SLs) in which the band structures and wave functions are calculated by solving the K.P Hamiltonian using the…
Carrier mobility in bulk semiconductors is typically governed by electron-phonon (e-ph) scattering. In nanostructures, spatial confinement can lead to significant surface scattering, lowering mobility and breaking the spatial homogeneity…
Aluminum nitride (AlN)-on-insulator has emerged as a promising platform for the realization of linear and non-linear integrated photonic circuits. In order to efficiently route optical signals on-chip, precise control over the interaction…