Related papers: High-linearity power amplifier based on GaAs HBT
Erbium-doped waveguide amplifiers have captured great attentions in recent years due to the rapid advance of photonic integration materials and fabrication techniques. In this work, a compact erbium-doped thin-film lithium niobate waveguide…
We report resistivity measurements from 0.03 K to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, $0.16 \times 10^{10}…
In this brief, a novel harmonic-backscatter-rectifier (HBR) is introduced for simultaneous rectification and harmonic-based uplink. The proposed (HBR) employs a rectifier to generate both DC power and the harmonic carriers for…
The fifth-generation (5G) network faces limitations in supporting emerging applications, such as artificial intelligence (AI), virtual reality (VR) and digital twins. To overcome these confines, sub-Terahertz (sub-THz) and Terahertz (THz)…
The development of the sixth generation of wireless communications technology (6G) requires terminals that can operate at frequencies above 100 GHz. For human-centric applications, these terminals should also be flexible and have low power.…
High resolution (0.15") Very Large Array observations of 7 mm continuum and H53a line emission toward the hypercompact H II region G28.20-0.04N reveal the presence of large-scale ordered motions. We find a velocity gradient of 1000 km/s/pc…
Energy efficiency (EE) is a major performance metric for fifth generation (5G) and beyond 5G (B5G) wireless communication systems, especially for ultra dense networks. This paper proposes an end-to-end (e2e) power consumption model and…
Using recently available GaN FETs, a 600 Volt three-stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ohm load with the potential of approaching 30 MHz average switching rates. Possible applications…
Transformer models have revolutionized AI tasks, but their large size hinders real-world deployment on resource-constrained and latency-critical edge devices. While binarized Transformers offer a promising solution by significantly reducing…
High-efficient heat dissipation plays critical role for high-power-density electronics. Experimental synthesis of ultrahigh thermal conductivity boron arsenide (BAs, 1300 W m-1K-1) cooling substrates into the wide-bandgap semiconductor of…
An experiment is proposed to excite the 'forbidden' 1s2s 3S1 - 1s2s 1S0 magnetic dipole (M1) transition at 1557 nm in a collimated and slow atomic beam of metastable helium atoms. It is demonstrated that an excitation rate of 5000 /s can be…
For the baseline APT (Accelerator Production of Tritium) linac design, power couplers are required to transmit 210-kW of CW RF power to the superconducting cavities. These APT couplers operate at 700 MHz, have a coaxial design and an…
Next-generation (5G/6G) wireless systems demand low-power mm-wave phased-array ICs. Variable-gain LNAs (VGLNAs) are key building blocks enabling hardware complexity reduction, performance enhancement and functionality extension. This paper…
Predicting the performance of traveling-wave parametric amplifiers (TWPAs) based on nonlinear elements like superconducting Josephson junctions (JJs) is vital for qubit read-out in quantum computers. The purpose of this article is twofold:…
An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a…
Type-II W-lasers have made an important contribution to the development of mid-infrared laser diodes. In this paper, we show that a similar approach can yield high performance lasers in the optical communications wavelength range.…
We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices have threading dislocation densities of 1.3x10^6 cm^-2 and…
Emitters based on photoconductive materials excited by ultrafast lasers are well established and popular devices for THz generation. However, so far, these emitters, both photoconductive antennas and large area emitters, were mostly…
While Time Division Duplexing (TDD) 5G New Radio (NR) networks offers higher downlink throughput due to the utilization of the middle frequency band, the uplink performance is negatively impacted due to higher path loss associated with…
GaN high electron mobility transistors (HEMT) have gained some foothold in the power electronics industry due to wide frequency bandwidth and power handling. The material offers a wide bandgap and higher critical field strength compared to…