Related papers: High-linearity power amplifier based on GaAs HBT
Gamow-Teller transitions from 24Mg to 24Na were studied via the (t,3He) reaction at 115 AMeV using a secondary triton beam produced via fast fragmentation of 150 AMeV 16O ions. Compared to previous (t,3He) experiments at this energy that…
We present a Wideband Tapered Gridded Estimator (TGE), which incorporates baseline migration and variation of the primary beam pattern for neutral hydrogen (${\rm H\hspace{0.5mm}}{\scriptsize {\rm I}}$) 21-cm intensity mapping (IM) with…
The RF part of the new high current injector-linac HSI consists of five cavities with the new operating frequency of 36 MHz instead of 27 MHz of the removed Wideroe type injector. The calculated power requirements of the cavities including…
Compact Free-Electron Lasers (FELs) offering broad, continuous spectral tunability are traditionally constrained by fixed-parameter magnetic structures and the necessity for high-energy electron beams. High-gain Harmonic Lasing (HL) has…
Circuit QED based quantum information processing relies on low noise amplification for signal readout. In the realm of microwave superconducting circuits, this amplification is often achieved via Josephson parametric amplifiers (JPA). In…
Broadband wavelength tuneability can ensure a new level of versatility for laser systems and extend areas of their applications. Principle limitations of achieving wide tuning wavelength ranges are generally defined by the spectral…
Realization of logic circuits in graphene with an energy gap (EG) remains one of the main challenges for graphene electronics. We found that large transport EGs (>100 meV) can be fulfilled in dual-gated bilayer graphene underneath a simple…
Transformer-based speech enhancement models yield impressive results. However, their heterogeneous and complex structure restricts model compression potential, resulting in greater complexity and reduced hardware efficiency. Additionally,…
We introduce a zero-bias superconducting voltage amplifier that harvests energy from a thermal gradient by exploiting negative differential resistance (NDR) in an asymmetric tunnel junction. The device is based on an asymmetric…
Laser powered dielectric structures achieve high-gradient particle acceleration by taking advantage of modern laser technology capable of producing electric fields in excess of 10GV/m. These fields can drive the bulk dielectric beyond its…
We propose digital signal processing techniques for nonlinearity mitigation in high power optical amplifiers used in satellite communications. The acceptable link loss increases by 6dB with negligible complexity.
Ulta-wide bandgap semiconductors based on $\beta$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most…
Erbium-doped lithium niobate on insulator (Er:LNOI) has attracted enormous interest as it provides gain and enables integrated amplifiers and lasers on the lithium niobate on insulator (LNOI) platform. We demonstrate a highly efficient…
A 16-channel optical phased array is fabricated on a gallium arsenide photonic integrated circuit platform with a low-complexity process. Tested with a 1064 nm external laser, the array demonstrates 0.92{\deg} beamwidth, 15.3{\deg}…
Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, there is significant interest in expanding the capabilities of…
High-gain antennas are essential hardware devices, powering numerous daily applications, including distant point-to-point communications, safety radars, and many others. While a common approach to elevate gain is to enlarge an antenna…
Next generation communication and sensing require enabling technologies for miniaturized and efficient heterogeneous systems while integrating technologies ranging from silicon to compound semiconductors and from photonic chips to…
High-performance electro-optic modulators play a critical role in modern telecommunication networks and intra-datacenter interconnects. Low driving voltage, large electro-optic bandwidth, compact device size, and multi-band operation…
We demonstrate high-power thin film lithium niobate (TFLN) erbium-doped waveguide amplifier (EDWA) with a maximum on-chip output power of 113 mW and a gain of 16 dB. The on-chip integrated EDWA is composed of large mode area (LMA) waveguide…
Erbium-doped fiber amplifiers have revolutionized long-haul optical communications and laser technology. Erbium ions could equally provide a basis for efficient optical amplification in photonic integrated circuits. However, this approach…