Related papers: High-linearity power amplifier based on GaAs HBT

Fast, high-fidelity, single-shot readout of superconducting qubits in quantum processors demands quantum-limited amplifiers to preserve the optimal signal-to-noise ratio. Typically, quantum-limited amplification is achieved with parametric…

Operating superconducting qubits at elevated temperatures offers increased cooling power and thus system scalability, but requires suppression of thermal photons to preserve coherence and readout fidelity. This motivates migration to higher…

This letter reports high-performance $\mathrm{\beta} Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-200 nm) leads to a peak drain current (ID,MAX) of 285…

Gallium Oxide (Ga2O3) has a huge potential on the power device for its high breakdown filed and good transport properties. beta-Ga2O3 as the thermodynamics stable phase, has been demonstrated to form high electron mobility transistor (HEMT)…

For designing an efficient terahertz (THz) emitter, the defect density of the semiconductors is smartly increased to reduce carrier lifetime, which subsequently lowers the overall power output of the semiconductor. To overcome this…

We report a novel method to reduce the collector-emitter offset-voltage of the wide bandgap SiC-P-emitter lateral HBTs using a dual-bandgap emitter. In our approach, the collector-emitter offset-voltage VCE(offset) is reduced drastically by…

Integrating the wireless power transfer (WPT) technology into the wireless communication system has been important for operational cost saving and power-hungry problem solving of electronic devices. In this paper, we propose a resonant beam…

A Low-Power Variable Gain (VG) mm-Wave Low Noise Amplifier (LNA) is designed and simulated in a 28-nm CMOS process. The LNA utilizes a simple, yet novel, technique presented in this paper to vary the small-signal output resistance to…

Scaling of GaN high-electron-mobility transistors (HEMTs) usually increases gate leakage current and deteriorates breakdown characteristic, limiting the maximum drain current and output power density. These bottlenecks can be circumvented…

A fast, voltage-tunable terahertz mixer based on the intersubband transition of a high-mobility 2-dimensional electron gas (2DEG) has been fabricated from a single 40 nm GaAs-AlGaAs square quantum well heterostructure. The device is called…

We theoretically predict and experimentally demonstrate inhibition of linear absorption for phase and group velocity mismatched second and third harmonic generation in strongly absorbing materials, GaAs in particular, at frequencies above…

High voltage (~2 kV) AlGaN-channel HEMTs were fabricated with 64% Aluminum composition in the channel. The average on-resistance was ~75 ohm. mm (~21 miliohm. cm^2) for LGD = 20 microns. Breakdown voltage reached >3 kV (tool limit) before…

In this paper, we examine the energy efficiency (EE) of a base station (BS) with multiple antennas. We use a state-of-the-art power consumption model, taking into account the passive and active parts of the transceiver circuitry, including…

Here, we demonstrate all-fiber direct amplification of 11 picosecond pulses from a gain-switched laser diode at 1063nm. The diode was driven at a repetition rate of 40MHz and delivered 13$\mu$W of fiber-coupled average output power. For the…

With the development of Internet of Things (IoT), demands of power and data for IoT devices increase drastically. In order to resolve the supply-demand contradiction, simultaneous wireless information and power transfer (SWIPT) has been…

This letter investigates a multiple-input multiple-output (MIMO) wireless power transfer (WPT) system under practical non-liner energy harvesting (EH) models. We propose a new generic energy receiver (ER) architecture consisting of $N$…

The amplitude V_0 of unidirectional periodic potential modulation introduced by a surface grating into a two-dimensional electron gas (2DEG) formed at AlGaAs/GaAs heterointerface is measured as a function of electron density n_e by…

Coherent technologies have revolutionized optical communications, driving the capacity per fiber to multi-terabit per second (Tb/s) in combination with wavelength division multiplexing (WDM). With an ever-increasing deployment density of…

We have built a parametric amplifier with a Josephson field effect transistor (JoFET) as the active element. The device's resonant frequency is field-effect tunable over a range of 2 GHz. The JoFET amplifier has 20 dB of gain, 4 MHz of…

A low-noise amplifier (LNA) amplifies a very low-power signal without significantly degrading its signal-to-noise ratio. This paper provides the design of a linear low noise amplifier with the transistor BFP 640 using bilateral approach…