English

Gate-tunable, superconductor-semiconductor parametric amplifier

Quantum Physics 2023-06-16 v3 Mesoscale and Nanoscale Physics
Authors: D. Phan , P. Falthansl-Scheinecker , U. Mishra , W. M. Strickland , D. Langone , J. Shabani , A. P. Higginbotham
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Abstract

We have built a parametric amplifier with a Josephson field effect transistor (JoFET) as the active element. The device's resonant frequency is field-effect tunable over a range of 2 GHz. The JoFET amplifier has 20 dB of gain, 4 MHz of instantaneous bandwidth, and a 1 dB compression point of -125.5 dBm when operated at a fixed resonance frequency.

Keywords

parametric amplifier field-effect transistors

Cite

@article{arxiv.2206.05746,
  title  = {Gate-tunable, superconductor-semiconductor parametric amplifier},
  author = {D. Phan and P. Falthansl-Scheinecker and U. Mishra and W. M. Strickland and D. Langone and J. Shabani and A. P. Higginbotham},
  journal= {arXiv preprint arXiv:2206.05746},
  year   = {2023}
}

Comments

13 pages, 11 figures

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