Related papers: High-linearity power amplifier based on GaAs HBT
A 16-element, compact phased array transceiver is demonstrated at E-band (71-76 and 81-86GHz). A Weaver image selection architecture reduces the LO tuning range to 3GHz while covering the 10GHz band. The bidirectional and efficient…
We will describe the thermal performance of power semiconductor module, which consists of hetero-junction bipolar transistors (HBTs), for mobile communication systems. We calculate the thermal resistance between the HBT fingers and the…
Next-generation cellular systems require low-power mm-wave phased-array ICs. Variable-gain LNAs (VG-LNAs) are key blocks enabling reduced hardware complexity, performance improvement and added functionalities. This paper reports a low-power…
We demonstrate here an efficient THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters by two orders of magnitude. By irradiating the SI-GaAs…
We demonstrate high-performance UWBG AlGaN PolFETs exhibiting a state-of-the-art combination of nearly 1 A/mm on-state current (~ 960 mA/mm) and large breakdown field (> 4.8 MV/cm) in high carrier density (1.15 x 1013 cm-2). Multi-kV…
We demonstrate a simple method to obtain accurate optical waveforms with a GHz-level programmable modulation bandwidth and Watt-level output power for wideband optical control of free atoms and molecules. Arbitrary amplitude and phase…
In this paper, a wideband high-gain 2 ? 2-element subarray is presented for 60 GHz band applications. The antenna is fed with waveguide-fed cavity backed configuration and designed entirely via simple rectangular apertures. To improve…
We present the development of a high power fibre laser system to investigate its suitability for use in a transverse electron beam profile monitor i.e. a laserwire. A system capable of producing individual pulses up to $165.8 \pm 0.4 \mu$J…
Layered two-dimensional (2D) semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve their performance, photogating, photoconductive, photovoltaic,…
High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from…
Increasing attention is given to the upper mid-band or Frequency Range 3 (FR3), from 7 to 24 GHz, in the research towards sixth-generation (6G) networks. Promises of offering large data rates at favorable propagation conditions are leading…
This paper examines a fluid antenna (FA)-assisted simultaneous wireless information and power transfer (SWIPT) system. Unlike traditional SWIPT systems with fixed-position antennas (FPAs), our FA-assisted system enables dynamic…
We report high average power THz emission from a GaAs-based large-area photoconductive emitter, excited by a commercial Yb-laser amplifier without any compression schemes, doubled to the green. The LAE is pumped at 11.4 W of green average…
This paper explores the road to vastly improving the broadband connectivity in future 6G wireless systems. Different categories of use cases are considered, with peak data rates up to 1 Tbps. Several categories of enablers at the…
We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~$\textrm{W}^{-1}…
Wireless transfer of power via high frequency microwave radiation using a miniature split ring resonator rectenna is reported. RF power is converted into DC power by integrating a rectification circuit with the split ring resonator. The…
This study presents a 3.6-cm-long erbium-doped lithium niobate waveguide amplifier enhanced by an inverse-designed on-chip reflector. Integrating the reflector at the waveguide end yielded an internal net gain of 40.5 dB, achieving a 17.3…
The performance of ultra-wide band gap materials like $\beta$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate…
We describe a wide-band Josephson Parametric Amplifier (JPA) that is impedance-matched using an integrated compact superconducting transmission line transformer. The impedance transformer consists of two broadside coupled transmission lines…
The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…