Related papers: Enhanced Spin Pumping and Magnetization dynamics i…
Using Density functional theory and non-equilibrium Green's function formalism, spin dependent electron transport in Fe/Mo$_x$Cr$_{1-x}$S$_2$/Fe magnetic tunnel junction is studied. Spin transport for different thicknesses (1, 3, 5, and 7…
We theoretically consider spin pumping in a junction between a ferromagnetic insulator (FI) and a two-dimensional electron gas (2DEG) in which the Rashba and Dresselhaus spin-orbit interactions coexist. Using second-order perturbation…
We study effects originating from the strong spin orbit coupling in CoFeB/MgO heterostructures with heavy metal (HM) underlayers. The perpendicular magnetic anisotropy at the CoFeB/MgO interface, the spin Hall angle of the heavy metal…
We demonstrate dynamic spin injection into chemical vapor deposition (CVD) grown graphene by spin pumping from permalloy (Py) layers. Ferromagnetic resonance measurements at room temperature reveal a strong enhancement of the Gilbert…
In GO/MoSe2 semiconductor heterostructure, we have demonstrated a subtle control on the doping dynamics by modulating interlayer coupling through the combination of strain-reducing relative rotation of the constituting layers and variation…
Spin injection efficiency based on conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin…
Magnetization switching using spin-orbit torque offers a promising route to developing non-volatile memory technologies. The prerequisite, however, is the charge-to-spin current conversion, which has been achieved traditionally by…
On-chip integration of 2D materials provides a promising route towards next-generation integrated optical devices with performance beyond existing limits. Here, significantly enhanced spectral broadening induced by self-phase modulation…
We have studied ferromagnetic metal/topological insulator bilayer system to understand magnetization dynamics of ferromagnetic metal (FM) in contact with a topological insulator (TI). At magnetic resonance condition, the precessing…
The discovery of intrinsic spin orbit fields in noncentrosymmetric ferromagnets has attracted considerable interest for both fundamental studies and technological applications. However, once such materials are synthesized, the strength of…
Quantum localization via atomic point defects in semiconductors is of significant fundamental and technological importance. Quantum defects in monolayer transition-metal dichalcogenide semiconductors have been proposed as stable and…
Interfacial interactions allow the electronic properties of graphene to be modified, as recently demonstrated by the appearance of satellite Dirac cones in the band structure of graphene on hexagonal boron nitride (hBN) substrates. Ongoing…
Spin-orbit coupling (SOC) can provide essential tools to manipulate electron spins in two-dimensional materials like graphene, which is of great interest for both fundamental physics and spintronics application. In this paper, we report the…
We present a study of the damping and spin pumping properties of CoFeB/X/Pt systems with $\rm X=Al,Cr$ and $\rm Ta$. We show that the total damping of the CoFeB/Pt systems is strongly reduced when an interlayer is introduced independently…
Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a…
Recently, it was experimentally realized that 2D superconducting transition metal dichalcogenides (TMD) such as gated MoS$_2$ and monolayer NbSe$_2$ have in-plane upper critical magnetic fields much higher than the Pauli limit. This is due…
In this work, we investigate the magnetic damping and spin pumping response of YIG-based bilayers incorporating vanadium (V) as the normal metal layer via broadband ferromagnetic resonance (FMR) measurements as a function of YIG thickness.…
Transition metal dichalcogenide (TMDC) monolayers are newly discovered semiconductors for a wide range of applications in electronics and optoelectronics. Most studies have focused on binary monolayers that share common properties: direct…
Engineering Gilbert damping of ferromagnetic metal films is of great importance to exploit and design spintronic devices that are operated with an ultrahigh speed. Based on scattering theory of Gilbert damping, we extend the torque method…
Complex ferromagnetic oxides such as La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) offer pathways for creating energy efficient spintronic devices with new functionalities. LSMO exhibits high-temperature ferromagnetism, half metallicity, sharp…