Related papers: Enhanced Spin Pumping and Magnetization dynamics i…
Conduction band-edge spin-orbit splitting (SOS) in monolayer transition metal dichalcogenides determines a competition between bright and dark excitons and sets conditions for spintronics applications of these semiconductors. Here, we…
Inducing sizable spin--orbit interactions in graphene by proximity effect is establishing as a successful route to harnessing two-dimensional Dirac fermions for spintronics. Semiconducting transition metal dichalcogenides (TMDs) are an…
Ferromagnetic resonance (FMR) based spin pumping is a versatile tool to quantify the spin mixing conductance and spin to charge conversion (S2CC) efficiency of ferromagnet/normal metal (FM/NM) heterostructure. The spin mixing conductance of…
Development of power efficient spintronics devices has been the compelling need in the post-CMOS technology era. The effective tunability of spin-orbit-coupling (SOC) in bulk and at the interfaces of hybrid materials stacking is a…
In this work we focus on magnetic relaxation in Mn$_{80}$Ir$_{20}$(12 nm)/ Cu(6 nm)/ Py($d_\mathrm{F}$) antiferromagnet/Cu/ferromagnet (AFM/Cu/FM) multilayers with different thickness of the ferromagnetic permalloy layer. An effective…
The emerging field of superconductor (SC) spintronics has attracted intensive attentions recently. Many fantastic spin dependent properties in SC have been discovered, including the observation of large magnetoresistance, long spin…
Current-perpendicular-to-plane magnetoresistance (CPP-MR) measurements let us quantify conduction electron scattering and spin-flipping at a sputtered ferromagnetic/ferromagnetic (F1/F2 = Co/Ni) interface, with important consequences for…
We report proximity effects of spin-orbit coupling in EuO$_{1-x}$ films capped with a Pt overlayer. Transport measurements suggest that current flows along a conducting channel at the interface between the Pt and EuO. The temperature…
Spin transport efficiency in heterostructures depends on the spin conductances of each constituent and their interfaces. We report a comparative study of spin pumping in Y3Fe5O12/Cu/Pt and Y3Fe5O12/Cu/W trilayers. Surprisingly, the…
Controlled spin transport in magnetic stacks is required to realize pure spin current-driven logic and memory devices. The control over the generation and detection of the pure spin current is achieved by tuning the spin to charge…
We investigated the dependence of the seed [Ta/Pt, Ta/Au] and capping [Pt/Ta, Au/Ta] layers on spin pumping effect in the ferromagnetic 3 nm thick Co thin film using ferromagnetic resonance spectroscopy. The data is fitted with Kittel…
We show that the spin pumping from ferromagnetic insulator into the adjacent metallic spin sink can be strongly stimulated by the superconducting correlations. The key physical mechanism responsible for this effect is the presence of…
MoS2 atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next generation electronic and electro-optical devices. Here we have…
Spin-orbit coupling and breaking of inversion symmetry are necessary ingredients to enable a pure spin current-based manipulation of the magnetization via the spin-orbit torque effect. Currently, magnetic insulator oxides with…
Spin transport of magnonic excitations in uniaxial insulating antiferromagnets (AFs) is investigated. In linear response to spin biasing and a temperature gradient, the spin transport properties of normal-metal--insulating…
Transition metal dichalcogenides have been the primary materials of interest in the field of valleytronics for their potential in information storage, yet the limiting factor has been achieving long valley decoherence times. We explore the…
We demonstrate giant magnetoresistance in Fe/MoS$_2$/Fe junctions by means of \textit{ab-initio} transport calculations. We show that junctions incorporating either a mono- or a bi-layer of MoS$_2$ are metallic and that Fe acts as an…
Spin-orbit coupling (SOC) has played an important role in many topological and correlated electron materials. In graphene-based systems, SOC induced by transition metal dichalcogenide (TMD) at proximity was shown to drive topological states…
Graphene supported on a transition metal dichalcogenide substrate offers a novel platform to study the spin transport in graphene in presence of a substrate induced spin-orbit coupling, while preserving its intrinsic charge transport…
We report the effect of oxygen pressure during growth ($P_{O_{2}}$) on the electronic and magnetic properties of PrAlO$_3$ films grown on $\rm TiO_{2}$-terminated SrTiO$_3$ substrates. Resistivity measurements show an increase in the sheet…