Related papers: Enhanced Spin Pumping and Magnetization dynamics i…
We study the enhancement of the ferromagnetic relaxation rate in thin films due to the adjacent normal metal layers. Using linear response theory, we derive the dissipative torque produced by the s-d exchange interaction at the…
In recent years, orbitronic effects have attracted growing attention as complementary counterparts to the well-established spintronic phenomena. In this work, we demonstrate that monolayers of transition metal dichalcogenides provide an…
The scalable synthesis of strong spin orbit coupling (SOC) materials such as 1T${}^\prime$ phase MoTe${}_2$ is crucial for spintronics development. Here, we demonstrate wafer-scale growth of 1T${}^\prime$ MoTe${}_2$ using metal-organic…
Spin-memory loss (SML) of electrons traversing ferromagnetic-metal/heavy-metal (FM/HM), FM/normal-metal (FM/NM) and HM/NM interfaces is a fundamental phenomenon that must be invoked to explain consistently large number of spintronic…
Heavy metals are key to spintronics because of their high spin-orbit coupling (SOC) leading to efficient spin conversion and strong magnetic interactions. When C60 is deposited on Pt, the molecular interface is metallised and the spin Hall…
We present angle dependent measurements of the damping properties of epitaxial Fe layers with MgO, Al and Pt capping layers. Based on the preferential distribution of lattice defects following the crystal symmetry, we make use of a model of…
Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a…
Spin-orbit torque (SOT) enables efficient current-driven control of magnetization, offering a promising pathway toward low-power spintronic devices. However, the origin and propagation of both damping-like (DL) and field-like (FL) SOTs in…
This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered…
We report that atomic-layer alloying (intermixing) at a Pt/Co interface can increase, by approximately 30%, rather than degrade the interfacial spin transparency, and thereby strengthen the efficiency of the dampinglike spin-orbit torque…
Spin-orbit (SO) interaction critically influences electron spin dynamics and spin transport in bulk semiconductors and semiconductor microstructures. This interaction couples electron spin to dc and ac electric fields. Spin coupling to ac…
Pure spin currents generated by spin pumping in ferromagnet/nonmagnet (FM/NM) bilayers produce inverse spin Hall effect (ISHE) voltages in the NM, from which spin pumping and transport characteristics of the NM can be extracted. Due to its…
We present measurements of ferromagnetic-resonance - driven spin pumping and inverse spin-Hall effect in NbN/Y3Fe5O12 (YIG) bilayers. A clear enhancement of the (effective) Gilbert damping constant of the thin-film YIG was observed due to…
Ultraflat bands have already been detected in twisted bilayer graphene and twisted bilayer transition-metal dichalcogenides, which provide a platform to investigate strong correlations. In this paper, the electronic properties of twisted…
Realization of novel functionalities by tuning magnetic interactions in rare earth perovskite oxide thin films opens up exciting technological prospects. Strain-induced tuning of magnetic interactions in rare earth cobaltates and nickelates…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetisation switching in advanced spintronic devices. Over the past two decades, researchers have primarily focused on enhancing spin…
We investigate the dynamical dielectric function of a monolayer of molybdenum disulfide within the random phase approximation. While in graphene damping of plasmons is caused by interband transitions, due to the large direct band gap in…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Recently, experiments…
We investigate the origin of spin-orbit torques (SOTs) in archetypical Pt/Co/MgO thin films structures by performing harmonic Hall measurements. The behaviour of the damping like (DL) effective field ($h_{DL}$) with varying the Pt layer…