The scalable synthesis of strong spin orbit coupling (SOC) materials such as 1T′ phase MoTe2 is crucial for spintronics development. Here, we demonstrate wafer-scale growth of 1T′ MoTe2 using metal-organic chemical vapor deposition (MOCVD) with sputtered Mo and (C4H9)2Te. The synthesized films show uniform coverage across the entire sample surface. By adjusting the growth parameters, a synthesis process capable of producing 1T′ and 2H MoTe2 mixed phase films was achieved. Notably, the developed process is compatible with back-end-of-line (BEOL) applications. The strong spin-orbit coupling of the grown 1T′ MoTe2 films was demonstrated through spin torque ferromagnetic resonance (ST-FMR) measurements conducted on a 1T′ MoTe2/permalloy bilayer RF waveguide. These measurements revealed a significant damping-like torque in the wafer-scale 1T′ MoTe2 film and indicated high spin-charge conversion efficiency. The BEOL compatible process and potent spin orbit torque demonstrate promise in advanced device applications.
@article{arxiv.2404.19135,
title = {Strong Damping-Like Torques in Wafer-Scale MoTe${}_2$ Grown by MOCVD},
author = {Stasiu Thomas Chyczewski and Hanwool Lee and Shuchen Li and Marwan Eladl and Jun-Fei Zheng and Axel Hoffmann and Wenjuan Zhu},
journal= {arXiv preprint arXiv:2404.19135},
year = {2024}
}