Related papers: Single-mode InAs/GaAs quantum-dot DFB laser with o…
We present a comprehensive study of dispersion managed ultrashort-pulse generation in Nd-doped polarization maintaining all-fiber laser at a 920 nm wavelength. We implement a linear laser scheme with a chirped fiber Bragg grating (CFBG)…
We demonstrate topological defect lasers in a GaAs membrane with embedded InAs quantum dots. By introducing a disclination to a square-lattice of elliptical air holes, we obtain spatially confined optical resonances with high quality…
We use an $sp^3d^5s^* $ tight-binding model to investigate the electronic and optical properties of realistic site-controlled (111)-oriented InGaAs/GaAs quantum dots. Special attention is paid to the impact of random alloy fluctuations on…
Optical isolator is an indispensable component of almost any optical system and is used to protect a laser from unwanted reflections for phase-stable coherent operation. The development of chip-scale optical systems, powered by…
The erbium-doped Lithium niobate on insulator (Er:LNOI) platform has great promise in the application of telecommunication, microwave photonics, and quantum photonics due to its excellent electro-optic, piezo-electric, nonlinear nature as…
The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies.…
Photonic quantum technologies call for scalable quantum light sources that can be integrated, while providing the end user with single and entangled photons on-demand. One promising candidate are strain free GaAs/AlGaAs quantum dots…
Fiber bragg gratings (FBG) has wide variety of applications in sensor and laser devices. In this work, we have fabricated FBG using point by point (PbP) technique utilizing fs laser. FBGs spectral characteristics were explored through the…
A femtosecond laser-written monolithic waveguide laser (WGL) oscillator based on a distributed feedback (DFB) architecture and fabricated in ytterbium doped phosphate glass is reported. The device lased at 1033 nm with an output power of…
We suggest to use InAs/GaSb coupled quantum wells for THz lasing. In these heterostructures THz lasing is based not on intersubband but on interband transitions. Crucial advantages of this design in comparison with intersubband lasers are…
Nonlinear frequency conversion is ubiquitous in laser engineering and quantum information technology. A long-standing goal in photonics is to integrate on-chip semiconductor laser sources with nonlinear optical components. Engineering…
Ultrashort pulsed lasers, operating through the phenomenon of mode-locking, have played a significant role in many facets of our society for 50 years, for example in the way we exchange information, measure and diagnose diseases, process…
InGaAs/InP single-photon avalanche diodes (SPADs) working in the regime of GHz clock rates are crucial components for the high-speed quantum key distribution (QKD). We have developed for the first time a compact, stable and user-friendly…
We have studied the steady state and dynamic optical properties of semiconductor microdisk lasers whose active region contains interface fluctuation quantum dots in GaAs/(Ga,Al)As quantum wells. Steady-state measurements of the stimulated…
The manufacturing cost of quantum cascade lasers is still a major bottleneck for the adoption of this technology for chemical sensing. The integration of Mid-Infrared sources on Si substrate based on CMOS technology paves the way for…
We present an experimental realization of the Optical Frequency Locked Loop (OFLL) applied to long-term frequency difference stabilization of broad-line DFB lasers. The presented design, based on an integrated phase-frequency detector chip,…
Semiconductor-based emitters of pairwise photonic entanglement are a promising constituent of photonic quantum technologies. They are known for the ability to generate discrete photonic states on-demand with low multiphoton emission,…
We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional…
We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of…
The purpose of this work is to look for a practical structure for application of quantum dots (QD) in solar cells in order to enhance sub-band gap photon absorption. We focuse on a stack of strain-compensated GaSb/GaAs type-II QDs. We…