Gate depletion of an InSb two-dimensional electron gas

M. M. Uddin; H. W. Liu; K. F. Yang; K. Nagase; K. Sekine; C. K. Gaspe; T. D. Mishima; M. B. Santos; Y. Hirayama

doi:10.1063/1.4821106

Gate depletion of an InSb two-dimensional electron gas

Mesoscale and Nanoscale Physics 2013-09-19 v1 Materials Science

Authors: M. M. Uddin , H. W. Liu , K. F. Yang , K. Nagase , K. Sekine , C. K. Gaspe , T. D. Mishima , M. B. Santos , Y. Hirayama

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Abstract

We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb compared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface layer. In contrast, a nonlinear, slow, and hysteretic (nonvolatile-memory-like) response was observed in the structure with an InSb surface layer. The 2DEG with the Al0.1In0.9Sb surface layer was completely depleted by application of a small gate voltage (-0.9 V).

Keywords

InSb two-dimensional electron gas gate depletion Al2O3 gate dielectric atomic layer deposition quantum well hysteresis nonvolatile memory

Cite

@article{arxiv.1309.4626,
  title  = {Gate depletion of an InSb two-dimensional electron gas},
  author = {M. M. Uddin and H. W. Liu and K. F. Yang and K. Nagase and K. Sekine and C. K. Gaspe and T. D. Mishima and M. B. Santos and Y. Hirayama},
  journal= {arXiv preprint arXiv:1309.4626},
  year   = {2013}
}

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12 pages, 3 figures

Gate depletion of an InSb two-dimensional electron gas

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