Related papers: Red Emission from Strain-Relaxed Bulk InGaN Active…
The investigation of small size embedded nanostructures, by a combination of complementary anomalous diffraction techniques, is reported. GaN Quantum Dots (QDs), grown by molecular beam epitaxy in a modified Stranski-Krastanow mode, are…
Longer wavelength emitters such as green LEDs display a pronounced efficiency drop at higher current densities, resulting in relatively low wall-plug efficiency. Multi-active region approach can improve the wall-plug efficiency…
For nitride-based InGaN and AlGaN quantum well (QW) LEDs, the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier diffusion length and current spreading. The diffusion length mainly impacts the…
Site-controlled growth of semiconductor quantum dots (QDs) represents a major advancement to achieve scalable quantum technology platforms. One immediate benefit is the deterministic integration of quantum emitters into optical…
High quality InN nanoparticles are grown using atmospheric chemical vapour deposition technique via a self-seeded catalytic approach in the temperature range of 580 to 650 oC. In this temperature region, nucleation barrier of InN is…
Several emission features mark semiconductor quantum dots as promising non-classical light sources for prospective quantum implementations. For long-distance transmission [1] and Si-based on-chip processing[2, 3], the possibility to match…
Recent James Webb Space Telescope (JWST) observations have revealed a population of compact extragalactic objects at $z\gtrsim4$ with red near-infrared colors, which have been dubbed as ``Little Red Dots" (LRDs). The…
Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs…
The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs…
This paper discusses the temperature-dependent properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructures for laser applications based on theoretical modeling as well as experimental findings. A microscopic theory is applied…
Conventional ultraviolet (UV) lamps for disinfection emit radiation in the 255-270 nm range, which poses a high risk of causing cancer and cataracts. To address these concerns, solid-state far UV-C sources emitting below 240 nm are gaining…
High-efficiency micro-light-emitting diodes (Micro-LEDs) are key devices for next-generation display technology. However, when the mesa size is reduced to around tens of micrometers or less, the luminous efficiency is constrained by the…
High resolution coherent nonlinear optical spectroscopy of an ensemble of red-emitting InGaN quantum dots in GaN nanowires is reported. The data show a pronounced atom-like interaction between resonant laser fields and quantum dot excitons…
We propose a compact high-intensity room-temperature source of entangled photons based on the efficient second-order process of two-photon spontaneous emission from electrically-pumped semiconductor quantum wells in a photonic microcavity.…
We demonstrate experimental results based on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the internal quantum efficiency (IQE) of InGaAs quantum dots (QDs). Using a strain-reducing layer (SRL)…
Laser diodes based on solution-processable materials could benefit numerous technologies including integrated electronics and photonics, telecommunication, and medical diagnostics. An attractive system for implementing these devices is…
AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long…
In this study, the quantum state depression (QSD) in semiconductor quantum well (QW) is investigated. The QSD emerge from the ridged geometry of the QW boundary. Ridges impose additional boundary conditions on the electron wave function and…
Copper-doped zinc sulfide (ZnS:Cu) exhibits down-conversion luminescence in the UV, visible, and IR regions of the electromagnetic spectrum; the visible red, green, and blue emission is referred to as R-Cu, G-Cu, and B-Cu, respectively. The…
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in…