Temperature-dependent spectral properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructure lasers
Abstract
This paper discusses the temperature-dependent properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructures for laser applications based on theoretical modeling as well as experimental findings. A microscopic theory is applied to discuss band bending effects giving rise to the characteristic blue shift with increasing charge carrier density observed in type-II heterostructures. Furthermore, gain spectra for a W-quantum well heterostructure are calculated up to high charge carrier densities. At these high charge carrier densities, the interplay between multiple type-II transitions results in broad and flat gain spectra with a spectral width of approximately 160 nm. Furthermore, the temperature-dependent properties of broad-area edge-emitting lasers are analyzed using electroluminescence as well as laser characteristic measurements. A first indication for the theoretically predicted broad gain spectra is presented and the interplay between the temperature-dependent red shift and the charge carrier density-dependent blue shift is discussed. A combination of these effects results in a significant reduction of the temperature-induced red shift of the emission wavelengths and even negative shift rates of (-0.10 plusminus 0.04) nm/K are achieved.
Keywords
Cite
@article{arxiv.2012.01522,
title = {Temperature-dependent spectral properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructure lasers},
author = {Christian Fuchs and Ada Baeumner and Anja Brueggemann and Christian Berger and Christoph Moeller and Stefan Reinhard and Joerg Hader and Jerome V. Moloney and Stephan W. Koch and Wolfgang Stolz},
journal= {arXiv preprint arXiv:2012.01522},
year = {2020}
}