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Excitonic parameters of InxGa1-xAs-GaAs heterostructures with quantum wells at low temperatures

Materials Science 2013-03-19 v1 Mesoscale and Nanoscale Physics
Authors: N. M. Litovchenko , D. V. Korbutyak , O. M. Strilchuk
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Abstract

Characteristics of GaAs/Inx_{x}Ga1−x_{1-x}As/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence spectra and their corresponding theoretical analysis.

Keywords

excitonic parameters inxga1-xas-gaas heterostructures quantum wells low-temperature photoluminescence growth parameters

Cite

@article{arxiv.1303.3884,
  title  = {Excitonic parameters of InxGa1-xAs-GaAs heterostructures with quantum wells at low temperatures},
  author = {N. M. Litovchenko and D. V. Korbutyak and O. M. Strilchuk},
  journal= {arXiv preprint arXiv:1303.3884},
  year   = {2013}
}

Comments

8 pages, 5 figures

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