Site-controlled growth of semiconductor quantum dots (QDs) represents a major advancement to achieve scalable quantum technology platforms. One immediate benefit is the deterministic integration of quantum emitters into optical microcavities. However, site-controlled growth of QDs is usually achieved at the cost of reduced optical quality. Here, we show that the buried-stressor growth technique enables the realization of high-quality site-controlled QDs with attractive optical and quantum optical properties. This is evidenced by performing excitation power dependent resonance fluorescence experiments at cryogenic temperatures showing QD emission linewidths down to 10 μeV. Resonant excitation leads to the observation of the Mollow triplet under CW excitation and enables coherent state preparation under pulsed excitation. Under resonant π-pulse excitation we observe clean single photon emission associated with g(2)(0)=0.12 limited by non-ideal laser suppression.
@article{arxiv.1612.08063,
title = {Resonance fluorescence of a site-controlled quantum dot realized by the buried-stressor growth technique},
author = {Max Strauss and Arsenty Kaganskiy and Robert Voigt and Peter Schnauber and Jan-Hindrik Schulze and Sven Rodt and Andre Strittmatter and Stephan Reitzenstein},
journal= {arXiv preprint arXiv:1612.08063},
year = {2017}
}