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We are the first to report the frequency response and corresponding current density of a wurtzite phase Indium Nitride (InN)-based vertical configuration Gunn diode at 1 \mu m active length. Domain growths dynamics with respect to space and…

Mid-infrared molecular hydrogen (H$_2$) emission is a powerful cooling agent in galaxy mergers and in radio galaxies; it is a potential key tracer of gas evolution and energy dissipation associated with mergers, star formation, and…

Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However,…

We analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide quantum wells. Contrary to common…

We investigate the luminescence of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN as well as 6H-SiC substrates. In striking contrast to their…

The photoluminescence of III-V wide band-gap semiconductors as InGaN is characterized by local intensity fluctuations, known as 'blinking points', that despite decades of research are not yet completely understood. In this letter we report…

Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer…

Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the near-bandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the…

Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the…

We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band…

Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers…

Following letter introduces a theoretical approach to investigate the effect of two-step GaN barrier layer growth methodology on the performance of InGaN/GaN MQW solar cell, in which a lower temperature GaN cap layer was grown on top of…

InxGa1-xN disks in GaN nanowires (DINWs) have emerged as a viable technology for on-chip tunable visible spectrum emission without the use of a phosphor. Here we present a study of the optical emission and absorption dynamics in DINWs that…

White light emitting diodes (LEDs) have become the most widely used lighting devices due to their high luminous efficiency, environmental friendliness, long lifespan, and energy-saving advantages. Currently, the production of white light…

We explore the effects of active galactic nuclei (AGN) and star formation activity on the infrared (0.3-1000 microns) spectral energy distributions of luminous infrared galaxies from z = 0.5 to 4.0. We have compiled a large sample of 151…

In a recent letter [Phys. Rev. Lett. 110, 177406 (2013)], presenting a spectroscopic study of the electrons emitted from the GaN p-cap of a forward-biased InGaN/GaN light-emitting diode (LED), the authors observed at least two distinct…

We report on the carrier dynamics in InGaN/GaN disk-in-a-wire quantum dots with precisely controlled location and structural parameters, including diameter, thickness and material composition. We measured the time-integrated and…

We study theoretically the performance of electrically pumped self-organized quantum dots as a gain material in the mid-IR range at room temperature. We analyze an AlGaAs/InGaAs based structure composed of dots-in-a-well sandwiched between…

Deterministic light sources capable of generating quantum states on-demand at wavelengths compatible with fiber optics and atmospheric transmission windows are essential for practical applications in quantum communication, distributed…

We present a detailed study of the six-dimensional phase space of the electron beam produced by the Cornell Energy Recovery Linac Photoinjector, a high-brightness, high repetition rate (1.3 GHz) DC photoemission source designed to drive a…