Related papers: Current Flow Mapping in Conducting Ferroelectric D…
Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in…
We study the externally-driven motion of the domain walls (DWs)of the pi/2 type in (in-the-plane ordered) nanostripes of the crystalline cubic anisotropy. Such DWs are much narrower than the transverse and vortex pi DWs of the soft-magnetic…
The application of imaging techniques based on ensembles of nitrogen-vacancy (NV) sensors in diamond to characterise electrical devices has been proposed, but the compatibility of NV sensing with operational gated devices remains largely…
We study the impact of the ferroelectric domain wall on the ballistic conductance of the single-layer graphene channel in the heterostructure graphene / physical gap / ferroelectric film using Wentzel-Kramers-Brillouin approximation. Both…
We study the equilibrium properties of a ferromagnetic insulator/superconductor structure near a magnetic domain wall. We show how the domain wall size is affected by the superconductivity in such structures. Moreover, we calculate several…
Efficient control of antiferromagnetic (AFM) domain switching in thin films is vital for advancing antiferromagnet-based memory devices. In this study, we directly observed the current-driven switching process of CoO AFM domains in the…
The ability to sensitively image electric fields is important for understanding many nanoelectronic phenomena, including charge accumulation at surfaces and interfaces and field distributions in active electronic devices. A particularly…
In the last two decades, a nanostructuring paradigm has been successfully applied in a wide range of thermoelectric materials, resulting in significant reduction in thermal conductivity and superior thermoelectric performance. These…
The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale…
Memristors are promising devices for scalable and low power, in-memory computing to improve the energy efficiency of a rising computational demand. The crossbar array architecture with memristors is used for vector matrix multiplication…
We demonstrate stable and reversible current induced switching of large-area ($> 100\;\mu m^2$) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope.…
We study the electronic and transport properties of a network of domain walls between insulating domains with opposite valley Chern numbers. We find that the network is semi-metallic with Dirac dispersion near the charge neutrality point…
Ferroelectric domain structure evolution induced by an external electric field was investigated by means of nematic liquid crystal (NLC) method in two strontium-barium niobate single crystals of nominal composition:…
We have developed a superconducting phase gradiometer consisting of two parallel DNA-templated nanowires connecting two thin-film leads. We have ramped the cross current flowing perpendicular to the nanowires, and observed oscillations in…
Natural interfaces in ferroic oxides have developed into versatile playgrounds for studying electronic correlation effects in 2D systems. The microscopic origin of the emergent local electronic properties is often debated, however, as…
Ferroelectric materials are spontaneous symmetry breaking systems characterized by ordered electric polarizations. Similar to its ferromagnetic counterpart, a ferroelectric domain wall can be regarded as a soft interface separating two…
A common strategy for reducing thermal conductivity of polycrystalline systems is to increase the number of grain boundaries. Indeed, grain boundaries enhance the probability of phonon scattering events, which has been applied to control…
Theoretical studies dealing with current-driven domain wall dynamics in ferrimagnetic alloys and, by extension, other antiferromagnetically coupled systems as some multilayers, are here presented. The analysis has been made by means of…
Next-generation concepts for solid-state memory devices are based on current-driven domain wall propagation, where the wall velocity governs the device performance. It has been shown that the domain wall velocity and the direction of travel…
Engraving trenches on the surfaces of ultrathin ferroelectric (FE) films and superlattices promises control over the orientation and direction of FE domain walls (DWs). Through exploiting the phenomenon of DW-surface trench (ST) parallel…