Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below 1012\unitA/m2, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.
@article{arxiv.0810.3576,
title = {High domain wall velocity at zero magnetic field induced by low current densities in spin-valve nanostripes},
author = {Stefania Pizzini and Vojtech Uhlir and Jan Vogel and Nicolas Rougemaille and Sana Laribi and Vincent Cros and Erika Jimenez and Julio Camarero and Carsten Tieg and Edgar Bonet and Marlio Bonfim and Richard Mattana and Cyrile Deranlot and Frédric Petroff and Christian Ulysse and Giancarlo Faini and Albert Fert},
journal= {arXiv preprint arXiv:0810.3576},
year = {2009}
}
Comments
Published version, Applied Physics Express 2, 023003 (2009) http://dx.doi.org/10.1143/APEX.2.023003