Related papers: Current Flow Mapping in Conducting Ferroelectric D…
In this paper, we present the dynamics and modeling of multi-domains in the ferroelectric FET (FeFET). Due to the periodic texture of domains, the electrostatics of the FeFET exhibit an oscillatory conduction band profile. To capture such…
Van der Waals (vdW) magnets are appealing candidates for realising spintronic devices that exploit current control of magnetization (e.g. switching or domain wall motion), but so far experimental demonstrations have been sparse, in part…
The current-induced motion of a domain wall in a semicircle nanowire with applied Zeeman field is investigated. Starting from a micromagnetic model we derive an analytical solution which characterizes the domain-wall motion as a harmonic…
Ultrathin ferromagnetic strips with high perpendicular anisotropy have been proposed for the development of memory devices where the information is coded in tiny domains separated by domain walls. The design of practical devices requires…
Nucleation of domain walls by current-driving a single domain wall, confined to the junction area of two symmetrical strips, is investigated using systematic micromagnetic simulations. Secondary domain walls (equivalently, bits encoded in…
The future developments of three-dimensional magnetic nanotechnology require the control of domain wall dynamics by means of current pulses. While this has been extensively studied in planar magnetic strips (planar nanowires), few reports…
Domain-wall dynamics in ferroelectric materials are strongly position-dependent since each polar interface is locked into a unique local microstructure. This necessitates spatially resolved studies of the wall-pinning using scanning-probe…
Among the recent discoveries of domain wall functionalities, the observation of electrical conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened exciting new possibilities. Here, we report evidence of…
In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance region could act as a step-up converter of the surface potential in a MOS structure, opening a new route for the realization of…
The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for…
Ferroelectric domain wall conductivity (DWC) is an intriguing functional property, that can be controlled through external stimuli such as electric and mechanical fields. Optical-field control, as a non-invasive flexible handle, has rarely…
The shape instability of magnetic domain walls under current is investigated in a ferromagnetic (Ga,Mn)(As,P) film with perpendicular anisotropy. Domain wall motion is driven by the spin transfer torque mechanism. A current density gradient…
Conductive domain walls (CDWs) in the uniaxial ferroelectric lithium niobate (LiNbO$_3$, LN) have attracted a lot of interest as potential elements in 2D nanoelectronics, due to their orders-of-magnitude larger electronic AC and DC…
Ferroelectric domain walls are nanoscale objects that can be created, positioned, and erased on demand. They often embody functional properties that are distinct from the surrounding bulk material. Enhanced conductivity, for instance, is…
The current work reports an efficient deep neural network (DNN) accelerator where synaptic weight elements are controlled by ferroelectric domain dynamics. An integrated device-to-algorithm framework for benchmarking novel synaptic devices…
The current-driven motion of magnetic domain walls (DWs) is the working principle of magnetic racetrack memories. In this type of spintronic technology, high current densities are used to propel DW motion in magnetic nanowires, causing…
We demonstrate current-induced displacement of ferromagnetic domain walls in sub-micrometer fabricated patterns of SrRuO3 films. The displacement, monitored by measuring the extraordinary Hall effect, is induced at zero applied magnetic…
A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall…
The continuous scaling of semiconductor-based technologies to micron and sub-micron regimes has resulted in higher device density and lower power dissipation. Many physical phenomena such as self-heating or current leakage become…
Domain walls are the transition regions between two magnetic domains. These objects have been very relevant during the last decade, not only due to their intrinsic interest in the development of novel spintronics devices but also because of…