Related papers: New process for high optical quality InAs quantum …
We demonstrate selective area epitaxy of GaAs films using patterned graphene masks on a Ge (001) substrate. The GaAs selectively grows on exposed regions of the Ge substrate, for graphene spacings as large as 10 microns. The selectivity is…
We show a large enhancement of two-photon absorption processes in nanocrystal quantum dots and of light upconversion efficiency from the IR to the near-IR spectral regime, using a hybrid optical device in which near-IR emitting InAs quantum…
Due to the advantage of tunability via size, shape, doping and relatively low level of loss and high extent of spatial confinement, graphene quantum dots (GQDs) are emerging as an effective way to control light by molecular engineering. The…
The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range.…
We demonstrate a nanostructure composed of partially etched annular trenches in a suspended GaAs membrane, designed for efficient and moderately broadband (approx. 5 nm) emission extraction from single InAs quantum dots. Simulations…
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…
Research of the nonlinear optical characteristics of transition metal dichalcogenides in the presence of photoactive particles, plasmonic nanocavities, waveguides, and metamaterials is still in its early stages. This investigation delves…
Manufacturing superconducting circuits out of ultrathin films is a challenging task when it comes to patterning complex compounds, which are likely to be deteriorated by the patterning process. With the purpose of developing high-T$_c$…
Structural and optical properties of MBE-grown GaAs(001) surface have been studied by reflection high-energy electron diffraction and single-wavelength ellipsometry under dynamic conditions of ramp heating after desorption of passivating…
The production of nanopatterns on the surfaces of targets irradiated by ion beams at low and intermediate energies has developed during the present decade to a salient degree of control over the main pattern features. However, there is…
Using a single-particle atomistic pseudopotential method followed by a many-particle configuration interaction method, we investigate the geometry, electronic structure and optical transitions of a self-assembled InAs/GaAs quantum ring…
We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For In mole fractions x = 0.13-0.48, best structural and…
InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and…
A concept for the fabrication of highly symmetric quantum dots that are coherently embedded in a single crystalline matrix is demonstrated. In this approach, the formation of the quantum dots is induced by a transformation of an epitaxial…
Self-assembled InAs quantum dots (QDs), which have long hole-spin coherence times and are amenable to optical control schemes, have long been explored as building blocks for qubit architectures. One such design consists of vertically…
GaMnAs/GaAs films were grown via molecular beam epitaxy using both low and high substrate temperatures. The films were investigated using Hall effect and photoluminescence (PL) measurements from 8 to 300 K. The carrier concentrations in the…
Fibers lasers is a field which is typically dominated by rare earth ions as gain material in the core of a silica optical waveguide. Due to their specific emission wavelengths, rare-earth doped fiber lasers are available only at few…
The authors report in situ Auger electron spectroscopy (AES) of the surfaces of complex oxides thin films grown by pulsed laser deposition (PLD). The authors demonstrate the utility of the technique in studying chemical composition by…
For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy (RDS) and analyzed with a rate equation model. The WL thicknesses showed a…
Dense arrays of semiconductor quantum dots are currently employed in highly efficient quantum dot lasers for data communications and other applications. Traditionally, the electronic properties of such quantum nanostructures have been…