Related papers: New process for high optical quality InAs quantum …
Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this…
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the…
We report quantum efficiency (QE) enhancements in accelerator technology relevant antimonide photocathodes (K2CsSb) by interfacing them with atomically thin two-dimensional (2D) crystal layers. The enhancement occurs in a reflection mode,…
The ease of integration coupled with large second-order nonlinear coefficient of atomically thin layered 2D materials presents a unique opportunity to realize second-order nonlinearity in silicon compatible integrated photonic system.…
The purpose of this research is to study laser dynamics of InAs/GaAs Quantum Dot Lasers (QDLs) by changing QD energy levels. To date, most of the investigations have focused on only one of these circumstances, and hardly the result of…
Among the diverse platforms of quantum light sources, epitaxially grown semiconductor quantum dots (QDs) are one of the most attractive workhorses for realizing various quantum photonic technologies owing to their outstanding brightness and…
The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology. Although significant advancement has been witnessed in recent years for single photon sources in near infrared…
We realize strongly confined quantum dots (QDs) in InAs nanowires (NWs) by combining epitaxial crystal-phase control with chemical wet etching. A strong axial confinement is first introduced by growing closely spaced wurtzite (WZ) tunnel…
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…
On-chip emitters that can generate single and entangled photons are essential building blocks for developing photonic quantum information processing technologies in a scalable fashion. Semiconductor quantum dots (QDs) are attractive…
Scalability and foundry compatibility (as for example in conventional silicon based integrated computer processors) in developing quantum technologies are exceptional challenges facing current research. Here we introduce a quantum photonic…
In this paper, we show that Inkjet Printing can be successfully applied to external-cavity vertically-emitting thin-film organic lasers, and can be used to generate a diffraction-limited output beam with an output energy as high as 33.6 uJ…
Colloidal quantum dots (cQDs) are now a mature nanomaterial with optical properties customizable through varying size and composition. However, their use in optical devices is limited as they are not widely available in convenient forms…
Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium…
Semiconductor quantum photonic circuits can be used to efficiently generate, manipulate, route and exploit non-classical states of light for distributed photon based quantum information technologies. In this article, we review our recent…
The influence of indium percentage on dynamical characteristics of InxGa1-xAs/GaAs(001) quantum dot lasers (QDLs) is investigated. Energy levels of self-organized truncated-cone-shape QDs are calculated by means of the eight-band k.p model,…
Present-day liquid-state lasers are based on organic dyes. Here we demonstrate an alternative class of liquid lasers that employ solutions of colloidal quantum dots (QDs). Previous efforts to realize such devices have been hampered by fast…
We report on the first observation of optical gain from InAs nanocrystal quantum dots emitting at 1.55 microns based on a three-beam, time resolved pump-probe technique. The nanocrystals were embedded into a transparent polymer matrix…
We present a detailed x-ray diffraction study of the strain in InAs/GaSb superlattices grown by molecular beam epitaxy. The superlattices were grown with either InSb or GaAs interfaces. We show that the superlattice morphology, either…
As demonstrated by Boto et al. [Phys. Rev. Lett. 85, 2733 (2000)], quantum lithography offers an increase in resolution below the diffraction limit. Here, we generalize this procedure in order to create patterns in one and two dimensions.…