Related papers: Novel Electrical Characterization Method for Antif…
We theoretically explore mechanisms that can potentially give rise to the steady-state and transient negative capacitance in a uniaxial ferroelectric film stabilized by a dielectric layer. The analytical expressions for the steady-state…
Tunable transmittance response in the $0.1-25$ THz range for a lead Zirconate Titanate Ferroelectric film under imprint effects and surface anisotropy is calculated by adapting the classical Landau Devonshire theory and the Rouard's method.…
The quest to understand correlated electronic systems has pushed the frontiers of experimental measurements toward the development of new experimental techniques and methodologies. Here we use a novel home-built uniaxial-strain device…
Finite differences, finite elements, and their generalizations are widely used for solving partial differential equations, and their high-order variants have respective advantages and disadvantages. Traditionally, these methods are treated…
In the first part of this work we calculate the high frequency magnetoelectric susceptibility of a simultaneously ferroelectric and canted antiferromagnetic (also know as weak ferromagnetic) thin film with magnetostrictive magnetoelectric…
Material surfaces encompass structural and chemical discontinuities that often lead to the loss of the property of interest in the so-called dead layers. It is notably problematic in nanoscale oxide electronics, where the integration of…
Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the…
Magnetization reversal in ferro- and ferrimagnets is a well-known archetype of non-equilibrium processes, where the volume fractions of the oppositely magnetized domains vary and perfectly compensate each other at the coercive magnetic…
Neutron diffraction measurements on multiferroic LuFe2O4 show changes in the antiferromagnetic (AFM) structure characterized by wavevector q = (1/3 1/3 1/2) as a function of electric field cooling procedures. The increase of intensity from…
The successful commercialization of flexible spintronic devices requires a complete understanding of the impact of external strain on the structural, electronic, and magnetic properties of a system. The impact of bending-induced strain on…
Aluminum scandium nitride (AlScN) ferroelectrics are promising for next-generation non-volatile memory applications due to high remnant polarization compared with Pb(ZrxTi1-x)O3 and doped-HfO2 material systems, as well as their fast…
The boundary conditions, customarily used in the Landau-type approach to ferroelectric thin films and nanostructures, have to be modified to take into account that a surface of a ferroelectric (FE) is a defect of the ``field'' type. The…
The large variety of complex electronic structure materials and their alloys, offer highly promising directions for improvements in thermoelectric (TE) power factors (PF). Their electronic structure contains rich features, referred to as…
Compositionally graded Fe-Pt thin films were prepared on stationary 100 mm Si substrates by magnetron sputtering a base target of Fe on which a piece of Pt is asymmetrically positioned. Energy Dispersive X-Ray analysis was used to map the…
The discovery of ferroelectric polarization in HfO2-based ultrathin films has spawned a lot of interest due to their potential applications in data storage. Recently, a new R3m rhombohedral phase was proposed to be responsible for the…
The structure of 180-degree uncharged rotational domain wall in a multiaxial ferroelectric film is studied within the framework of analytical Landau-Ginzburg-Devonshire (LGD) approach. The Finite Element Modelling (FEM) is used to solve…
We present a comprehensive analysis of boundary phenomena in a spin-$\frac{1}{2}$ anisotropic Heisenberg chain (XXZ-$\frac{1}{2}$) in the gapped antiferromagnetic phase, with a particular focus on the interplay between fractionalized…
We propose an energy-stable parametric finite element method (ES-PFEM) for simulating solid-state dewetting of thin films in two dimensions via a sharp-interface model, which is governed by surface diffusion and contact line (point)…
Tuning the properties of materials using external stimuli is crucial for developing versatile smart materials. A strong coupling among order parameters within a single-phase material constitutes a potent foundation for achieving precise…
The rare-earth chromates (RECrO$_3$) and manganites (REMnO$_3$) where, RE = Eu, Y, Dy, Ho, Gd are constantly under scrutiny in search of room temperature magnetoelectric multiferroics. However, the artefacts and undesirable signal in some…