Related papers: Novel Electrical Characterization Method for Antif…
Multiferroic BiFeO$_3$ (BFO) possesses a rich phase diagram that allows strain tuning of its properties in thin-film form. In particular, at large compressive strain, a supertetragonal (T) phase with giant polarization is stabilized over…
Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and…
First-principles density-functional theory calculations show switching magnetization by 90 degree can be achieved in ultrathin BFO film by applying external electric-field. Up-spin carriers appear to the surface with positive field while…
Fine-pitch hybridisation processes are essential for next-generation pixel detectors and high-density microelectronic assemblies. Conventional bump-bonding techniques, although reliable, remain costly and difficult to implement for…
By directly measuring electrical hysteresis loops using the Positive-Up Negative-Down (PUND) method, we accurately determined the remanent ferroelectric polarization Pr of orthorhombic RMnO3 (R = Ho, Tm, Yb, and Lu) compounds below their…
We report an interesting magnetic behavior of a Co film (thickness ~ 350 {\AA}) grown on Si/Ti/Cu buffer layer by electro-deposition (ED) technique. Using depth sensitive X-ray reflectivity and polarized neutron reflectivity (PNR) we…
A few theoretical models predict Fe to display both ferromagnetic and antiferromagnetic phases, depending on the volume of the unit cell. A proper choice of the substrate allows the growth of thin Fe overlayers with structures different…
Establishing the relation between the ubiquitous antiferromagnetism in the non-superconducting parent compounds of unconventional superconductors and their superconducting phase is believed to be important for the understanding of the…
Thin film ferroelectric devices with ultralow power operation, non-volatile data retention and fast and reliable switching are attractive for non-volatile memory and as synaptic weight elements. However, low thermal budget ferroelectric…
When two BN layers are stacked in parallel in an AB or BA arrangement, a spontaneous out-of-plane electric polarization arises due to charge transfer in the out-of-plane B-N bonds. The ferroelectric switching from AB to BA (or BA to AB) can…
In the generic phase diagram of heavy fermion systems, tuning an external parameter such as hydrostatic or chemical pressure modifies the superconducting transition temperature. The superconducting phase forms a dome in the…
We predict a new type of the negative-$U$ Anderson impurity formed in a triple quantum dot. The two dots of the system behave as a negative-$U$ impurity preferring zero or double electron occupancy rather than single occupancy, and the…
This research focuses on a coherently driven four-level atomic medium with the aim of inducing a negative index of refraction while taking into consideration local field corrections as well as magnetoelectric cross coupling, i.e. chirality,…
We report on the superior vortex pinning of single and multilayer Ba(Fe1-xCox)2As2 thin films with self-assembled c-axis and artificially introduced ab-plane pins. Ba(Fe1-xCox)2As2 can accept a very high density of pins (15-20 vol%) without…
Altermagnets host spin-split electronic bands without net magnetization, enabling spin-polarized transport in the absence of conventional ferromagnetism. RuO$_2$ has been proposed as a candidate altermagnet, yet experimental reports remain…
Epitaxial FeRh(100) films (CsCl structure, $\sim 10\ ML\ $ thick), prepared {\it in-situ} on a W(100) single crystal substrate, have been investigated via valence band and core level photoemission. The presence of the temperature-induced,…
The challenges in feature selection, particularly in balancing model accuracy, interpretability, and computational efficiency, remain a critical issue in advancing machine learning methodologies. To address these complexities, this study…
We study coupling between the ferroelectric polarization and magnetization of granular ferromagnetic film using a phenomenological model of combined multiferroic system consisting of granular ferromagnetic film placed above the…
Antiferromagnetic (AFM) materials are considered as promising building blocks of novel data storage devices, still, detecting and manipulating AFM domains have remained challenging. Here, we demonstrate that the two antiphase domains of the…
Active control of wrinkling in soft film-substrate composites using electric fields is a critical challenge in tunable material systems. Here, we investigate the electro-mechanical instability of a soft dielectric film bonded to a…