Related papers: Novel Electrical Characterization Method for Antif…

Piezoelectrics interconvert mechanical energy and electric charge and are widely used in actuators and sensors. The best performing materials are ferroelectrics at a morphotropic phase boundary (MPB), where several phases can intimately…

Electrical switching of antiferromagnets is an exciting recent development in spintronics, which promises active antiferromagnetic devices with high speed and low energy cost. In this emerging field, there is an active debate about the…

Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes (FeDs) are two-terminal NVM devices exhibiting rectifying…

Here we demonstrate a method to tune ferroelectric imprint, which is stable in time, based on the coupling between the non-switchable polarization of ZnO and switchable polarization of PbZrxTi(1-x)O3. SrRuO3/PbZrxTi(1-x)O3 /ZnO/SrRuO3…

This paper investigates wake-up and imprint in ferroelectric AlScN films. The study employs a series of I-V and P-E measurements with varying electric field amplitudes and voltage cycles as well as structural investigation via Scanning…

Angle-resolved photoemission spectroscopy (ARPES) is the most powerful technique to investigate the electronic band structure of crystalline solids. To completely characterize the electronic structure of topological materials, one needs to…

This paper presents a deep learning strategy to simultaneously solve Partial Differential Equations (PDEs) and back-calculate their parameters in the context of deep tunnel excavation. A Physics-Informed Neural Network (PINN) model is…

We consider a set of M images, whose pixel intensities at a common point can be treated as the components of a M-dimensional vector. We are interested in the estimation of the modulus of such a vector associated to a compact source. For…

Hidden spin polarization (HSP) emerges in centrosymmetric crystals where visible spin splittings in the real space can be observed because of the lack of inversion symmetry in each local sector. Starting from tight-binding models, we…

Materials undergoing antiferroelectric/ferroelectric (AFE/FE) transitions are studied for possible applications that exploit the large volume, charge and entropy differences between the two states, such as electrocaloric cooling, energy…

Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room…

YFeO$_3$ thin films are a recent addition to the family of multiferroic orthoferrites where Y\textsubscript{Fe} antisite defects and strain have been shown to introduce polar displacements while retaining magnetic properties. Complete…

Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for…

The interplay among structural, electronic, and magnetic properties of Fe adatoms on the surface of two-dimensional ferroelectric {\alpha}-In$_2$Se$_3$ is investigated using first-principles electronic structure calculations, with a focus…

A topological superconductor, characterized by either a chiral order parameter or a chiral topological surface state in proximity to bulk superconductivity, is foundational to topological quantum computing. As in other topological phases of…

A reduction of polarization in ultra-thin ferroelectric films appears to be fundamental to ferroelectricity at the nanoscale. For the model system PbTiO3 on SrTiO3, we report observation of the polarization vs. thickness relation. Distinct…

Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectrics-either within the back-end-of-line (BEOL) of CMOS front-end processes or through advanced…

Si-PIN detectors can be microstructured to achieve angular-selective particle detection capabilities, which we call active Transverse Energy Filter (aTEF). The microstructuring consists of a honeycomb structure of deep hexagonally-shaped…

We report here sign reversal and tunability of exchange bias in AuFe cosputtered films of thickness about 63 nm. As deposited film exhibits exchange bias effect at room temperature without external triggering field and its magnitude…

Hybrid improper ferroelectricity (HIF) denotes a new class of polar instability by the mixture of two octahedral-distortion modes and can feature the coexistence of abundant head-to-head and tail-to-tail polar domains, of which the domain…