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Transition metal dichalcogenide field-effect transistors (FETs) have been actively explored for low-power electronics, light detection, and sensing. Albeit promising, their performance is strongly limited by low-frequency noise (LFN). Here,…

Mesoscale and Nanoscale Physics · Physics 2017-04-04 Isidoro Martinez , Mario Ribeiro , Pablo Andres , Luis E. Hueso , Felix Casanova , Farkhad G. Aliev

Aluminum scandium nitride (AlScN) is a promising barrier material for gallium nitride (GaN)-based transistors for the next generation of radio-frequency electronic devices. In this work, we examine the transport properties of two…

In this dissertation, resonator-based readout techniques were developed for floating electrons as qubits on cryogenic substrates, using two platforms: electrons on liquid helium and electrons on solid neon. In addition, a cryogenic…

Quantum Physics · Physics 2026-01-30 Yiran Tian

Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on…

Mesoscale and Nanoscale Physics · Physics 2017-05-09 Nan Ai , Onejae Sul , Milan Begliarbekov , Qiang Song , Kitu Kumar , Daniel S. Choi , Eui-Hyeok Yang , Stefan Strauf

We have constructed an apparatus to study DC electrical breakdown in liquid helium at temperatures as low as 0.4 K and at pressures between the saturated vapor pressure and $\sim$600 torr. The apparatus can house a set of electrodes that…

A semi-phenomenological model of a many-particle system of 4He atoms is proposed, in which a helium atom is considered as a complex consisting of a nucleus and a bound pair of electrons in the singlet state. At zero temperature, there are…

Statistical Mechanics · Physics 2021-09-15 Yu. M. Poluektov

Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the…

Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for…

Mesoscale and Nanoscale Physics · Physics 2015-03-16 P. Clapera , X. Jehl , A. Corna , S. J. Ray , M. Sanquer , A. Valentian , S. Barraud

Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a…

We report an actuation/detection scheme with a top-down nano-electromechanical system for frequency shift-based sensing applications with outstanding performance. It relies on electrostatic actuation and piezoresistive nanowire gauges for…

We have measured the 1S - 2S transition frequency in atomic hydrogen via two photon spectroscopy on a 5.8 K atomic beam. We obtain $f_{1S-2S} = 2 466 061 413 187 035 (10)$ Hz for the hyperfine centroid. This is a fractional frequency…

Quantum sensing and computation can be realized with superconducting microwave circuits. Qubits are engineered quantum systems of capacitors and inductors with non-linear Josephson junctions. They operate in the single-excitation quantum…

When floating on a two-dimensional (2D) surface of superfluid $^{4}$He, electrons arrange themselves in 2D crystalline structure known as Wigner crystal. In channels, the boundaries interfere the crystalline order and in case of very narrow…

Mesoscale and Nanoscale Physics · Physics 2014-02-03 A. A. Vasylenko , V. R. Misko

In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs,…

Computational Physics · Physics 2025-03-05 Florian Ludwig , Hartmut G. Roskos , Raul Borsche

We report the fabrication of ionic liquid (IL) gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility about 60 cm2V-1s-1 at 250 K in ionic liquid gated…

It is analyzed the hydrodynamics of carriers (charge and heat motion) and phonons (heat motion) in semiconductors in the presence of constant electric fields. This is done in terms of a so-called Higher-Order Generalized Hydrodynamics…

Mesoscale and Nanoscale Physics · Physics 2016-01-20 Clóves G. Rodrigues , A. Rubens B. Castro , Roberto Luzzi

We study transport properties of a non-degenerate two-dimensional system of non-interacting electrons in the presence of a quantizing magnetic field and a short-range disorder potential. We show that the low-frequency magnetoconductivity…

Strongly Correlated Electrons · Physics 2007-05-23 Frank Kuehnel , Leonid P. Pryadko , M. I. Dykman

To improve both scalability and noise-filtering capability of a Transition-Edge Sensor (TES), a new concept of a thin-film detector is suggested, which is based on embedding a microbridge TES into a high-Q planar GHz range resonator weakly…

Instrumentation and Detectors · Physics 2018-07-04 S. V. Shitov , N. N. Abramov , A. A. Kuzmin , M. Merker , M. Arndt , S. H. Wuensch , K. S. Ilin , E. Erhan , A. Ustinov , M. Siegel

Superconducting circuits can exhibit quantized energy levels and long coherence times. Harnessing the anharmonicity offered by Josephson junctions, such circuits have been successfully employed as qubits, quantum limited amplifiers and…

Mesoscale and Nanoscale Physics · Physics 2025-06-24 Priya Sharma , Jens Koch , Eran Ginossar

We have investigated low-frequency 1/f noise in the boron nitride - grapheme - boron nitride heterostructure field - effect transistors on Si/SiO2 substrates (f is a frequency). The device channel was implemented with a single layer…

Mesoscale and Nanoscale Physics · Physics 2015-08-11 Maxim A. Stolyarov , Guanxiong Liu , Sergey L. Rumyantsev , Michael Shur , Alexander A. Balandin
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