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Rydberg-atom electric field sensing has shown great potential from near-DC to THz with state-of-the-art measurement metrics realized in sensitivity, phase extraction, multi-band receptivity, etc. While Rydberg-atom sensors have shown…
The electron transport in inhomogeneous quasi-one-dimensional conducting channels on the liquid helium surface are studied in the temperature range 0.6-1.5 K. Inhomogeneities are created by charging the substrate on which the conducting…
Transmon qubits fabricated with tantalum metal have been shown to possess energy relaxation times greater than 300 $\mu$s and, as such, present an attractive platform for high precision, correlated noise studies across multiple higher…
High-frequency electromagnetic fields (EMFs) are increasingly recognized either as environmental risk factors or as tools for electromagnetic attacks, which are difficult to detect in situ. Existing high-frequency EMF sensors face…
Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of…
Numerically "exact" methods addressing the dynamics of coupled electron--phonon systems have been intensively developed. Nevertheless, the corresponding results for the electron mobility $\mu_\mathrm{dc}$ are scarce, even for the…
By coupling a quantum detector, a superconductor-insulator-superconductor junction, to a Josephson junction \textit{via} a resonant circuit we probe the high frequency properties, namely the ac complex admittance and the current…
We report the transport properties of mechanically exfoliated few-layer SnSe$_{2}$ flakes, whose mobility is found with four probe measurements to be ~ 85 cm$^{2}$V$^{-1}$s$^{-1}$ at 300 K, higher than those of the majority of few-layer…
The enhanced thermopower of the correlated semiconductor FeSi is found to be robust against the sign of the relevant charge carriers. At $T$\,$\approx$\,70 K, the position of both the high-temperature shoulder of the thermopower peak and…
Large-scale quantum computing requires cryogenic electronic controllers such as control/readout circuit and routing circuit. However, current technologies face high power dissipation problems, hindering large-scale qubit integration. Here,…
Graphene electrodes are promising candidates to improve reproducibility and stability in molecular electronics through new electrode-molecule anchoring strategies. Here we report sequential electron transport in few-layer graphene…
Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic…
This study demonstrates 3D monolithic integration of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) on Gallium Nitride (GaN) high electron mobility transistors (HEMTs) in a cascode configuration, achieving high…
Scalable methods for improving the performance and stability of a field-effect transistor (FET) based on two-dimensional materials are crucial for its real applications. A scalable method of encapsulating the exfoliated MoS$ _{2} $ on SiO$…
We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances. At high…
A well-balanced detector with high sensitivity and low noise is presented in this paper. The two-stage amplification structure is used to increase electronic gain while keeping an effective bandwidth of about 70 MHz. In order to further…
Strongly correlated electron liquids which occur in quantizing magnetic fields reveal a cornucopia of fascinating quantum phenomena such as fractionally charged quasiparticles, anyonic statistics, topological order, and many others. Probing…
Several models of thermionic energy nanoconverters have been proposed to study the transport phenomena that take place in electronic devices. For example, in resonant tunneling junctions those phenomena are manifested through the…
Viscous fluid in an ultrahigh-mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs quantum wells is systematically studied through measurements of negative magnetoresistance (NMR) and photoresistance under microwave radiation, and…
We present measurements of the low-frequency noise of microstrip-coupled, lumped-element aluminum kinetic inductance detectors that use hydrogenated amorphous silicon parallel-plate capacitors (Al/a-Si:H MS-PPC-LEKIDs), which are under…