Related papers: Sensing Few Electrons Floating on Helium with High…

GaN high electron mobility transistors (HEMT) have gained some foothold in the power electronics industry due to wide frequency bandwidth and power handling. The material offers a wide bandgap and higher critical field strength compared to…

We demonstrate simultaneous measurements of DC transport properties and flux noise of a hybrid superconducting magnetometer based on the proximity effect (superconducting quantum interference proximity transistor, SQUIPT). The noise is…

The low-field electron diffusion, noise, and the conduction in amorphous chalcogenides are investigated by means of a Monte Carlo implementation of a full three- dimensional variable-range hopping transport model between localized states.…

Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility…

Recent experiments on the coupling of the in-plane motional state of electrons floating on the surface of liquid helium to a microwave resonator have revealed the importance of helium surface fluctuations to the coherence of this motion.…

The SPLENDOR Collaboration studies novel narrow-gap semiconductors and engineered a substrate agnostic detector platform to achieve $\mathcal{O}$(meV) energy sensitivity designed for low mass dark matter searches. This was achieved using…

Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanoscale electronic devices, such as 2D semiconductor devices.…

The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data processing and multivariable optimization. Ferroelectric materials…

Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and…

The interplay between charge ordering and its manifestation in macroscopic electrical transport in low-dimensional materials is crucial for understanding resistive switching mechanisms. In this study, we investigate the electronic transport…

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG)…

Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present…

We show that the sensitivity of antenna-coupled field-effect transistors (FETs) to terahertz (THz) radiation improves continuously with decreasing temperature. The noise-equivalent power (NEP) of 540 GHz patch-antenna-coupled FETs decreases…

Owing to their strong dipole moment and long coherence times, superconducting qubits have demonstrated remarkable success in hybrid quantum circuits. However, most qubit architectures are limited to the GHz frequency range, severely…

The SPICE/HeRALD collaboration is performing R&D to enable studies of sub-GeV dark matter models using a variety of target materials. Here we report our recent progress on instrumenting a superfluid $^4$He target mass with a transition-edge…

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique…

Very small electromechanical coupling coefficient in micro-electromechanical systems (MEMS) or acoustic resonators is quite of a concern for oscillator performance, specially at mmWave frequencies. This small coefficient is the…

This paper presents low power dissipation, low phase noise ring oscillators (ROs) based on Semiconductor Manufacturing International Corporation (SMIC) 0.18{\mu}m CMOS technology at liquid helium temperature (LHT). First, the…

The successful detection of biomolecules by a Field Effect Transistor-based biosensor (BioFET) is dictated by the sensor's intrinsic Signal-to-Noise Ratio (SNR). The detection limit of a traditional BioFET is fundamentally limited by…

Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…