Related papers: The maximum storage capacity of open-loop written …
Random number generation is a fundamental security primitive for RFID devices. However, even this relatively simple requirement is beyond the capacity of today's average RFID tag. A recently proposed solution, Fingerprint Extraction and…
Magnetic data storage is pervasive in the preservation of digital information and the rapid pace of computer development requires ever more capacity. Increasing the storage density for magnetic hard disk drives requires a reduced bit size,…
Deep learning hardware designs have been bottlenecked by conventional memories such as SRAM due to density, leakage and parallel computing challenges. Resistive devices can address the density and volatility issues, but have been limited by…
Despite the impressive search rate of one key per clock cycle, the update stage of a random-access-memory-based content-addressable-memory (RAM-based CAM) always suffers high latency. Two primary causes of such latency include: (1) the…
Non-volatile memory, such as resistive RAM (RRAM), is an emerging energy-efficient storage, especially for low-power machine learning models on the edge. It is reported, however, that the bit error rate of RRAMs can be up to 3.3% in the…
The growing energy demands of information and communication technologies, driven by data-intensive computing and the von Neumann bottleneck, underscore the need for energy-efficient alternatives. Resistive random-access memory (RRAM)…
Data recovery has long been a focus of the electronics industry for decades by security experts, focusing on hard disk recovery, a type of non-volatile memory. Unfortunately, none of the existing research, neither from academia, industry,…
Quantum Reservoir Computing (QRC) exploits the dynamics of quantum ensemble systems for machine learning. Numerical experiments show that quantum systems consisting of 5-7 qubits possess computational capabilities comparable to conventional…
To support emerging applications ranging from holographic communications to extended reality, next-generation mobile wireless communication systems require ultra-fast and energy-efficient baseband processors. Traditional complementary…
Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…
RRAM technology has experienced explosive growth in the last decade, with multiple device structures being developed for a wide range of applications. However, transitioning the technology from the lab into the marketplace requires the…
Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic…
Dynamic random access memory (DRAM) is critical to classical computing but notably absent in current superconducting quantum processors. Integrating high-coherence memory units would enable resource-efficient control of logical qubits and…
Although we may be at the end of Moore's law, lowering chip power consumption is still the primary driving force for the designers. To enable low-power operation, we propose a resonant energy recovery static random access memory (SRAM). We…
As data-intensive applications increasingly strain conventional computing systems, processing-in-memory (PIM) has emerged as a promising paradigm to alleviate the memory wall by minimizing data transfer between memory and processing units.…
Resistive random-access memory (RRAM) provides an excellent platform for analog matrix computing (AMC), enabling both matrix-vector multiplication (MVM) and the solution of matrix equations through open-loop and closed-loop circuit…
Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHammer and RowPress are two examples of read disturbance in…
Due to the crossbar array architecture, the sneak-path problem severely degrades the data integrity in the resistive random access memory (ReRAM). In this letter, we investigate the channel quantizer design for ReRAM arrays with multiple…
A random access memory (RAM) uses n bits to randomly address N=2^n distinct memory cells. A quantum random access memory (qRAM) uses n qubits to address any quantum superposition of N memory cells. We present an architecture that…
In recent times, Resistive RAMs (ReRAMs) have gained significant prominence due to their unique feature of supporting both non-volatile storage and logic capabilities. ReRAM is also reported to provide extremely low power consumption…