Related papers: The maximum storage capacity of open-loop written …

Content addressable memory is popular in intelligent computing systems as it allows parallel content-searching in memory. Emerging CAMs show a promising increase in bitcell density and a decrease in power consumption than pure CMOS…

Increased process variability and reliability issues present a major challenge for future SRAM trends. Non-intrusive and accurate SRAM stability measurement is crucial for estimating yield in large SRAM arrays. Conventional SRAM variability…

This paper considers the problem of information capacity of a random neural network. The network is represented by matrices that are square and symmetrical. The matrices have a weight which determines the highest and lowest possible value…

A random access memory, or RAM, is a device that, when interrogated, returns the content of a memory location in a memory array. A quantum RAM, or qRAM, allows one to access superpositions of memory sites, which may contain either quantum…

Memory management is necessary with the increasing number of multi-connected AI devices and data bandwidth issues. For this purpose, high-speed multi-port memory is used. The traditional multi-port memory solutions are hard-bounded to a…

The SRAM cell is made up of latch, which ensures that the cell data is preserved as long as power is turned on and refresh operation is not required for the SRAM cell. SRAM is widely used for on-chip cache memory in microprocessors, game…

Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…

Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…

Increasing storage density exacerbates DRAM read disturbance, a circuit-level vulnerability exploited by system-level attacks. Unfortunately, existing defenses are either ineffective or prohibitively expensive. Efficient mitigation is…

Resistive memories store information in a crossbar arrangement of two-terminal devices that can be programmed to patterns of high or low resistance. While extremely compact, this technology suffers from the "sneak-path" problem: certain…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is…

This article introduces a novel, low-cost technique for hiding data in commercially available resistive-RAM (ReRAM) chips. The data is kept hidden in ReRAM cells by manipulating its analog physical properties through switching…

Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…

Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a…

This paper summarizes our work on experimentally characterizing, mitigating, and recovering data retention errors in multi-level cell (MLC) NAND flash memory, which was published in HPCA 2015, and examines the work's significance and future…

As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…

Random access memory is an indispensable device for classical information technology. Analog to this, for quantum information technology, it is desirable to have a random access quantum memory with many memory cells and programmable access…

Quantum devices should operate in adherence to quantum physics principles. Quantum random access memory (QRAM), a fundamental component of many essential quantum algorithms for tasks such as linear algebra, data search, and machine…

For neuromorphic engineering to emulate the human brain, improving memory density with low power consumption is an indispensable but challenging goal. In this regard, emerging RRAMs have attracted considerable interest for their unique…

Modern DRAM chips are subject to read disturbance errors. State-of-the-art read disturbance mitigations rely on accurate and exhaustive characterization of the read disturbance threshold (RDT) (e.g., the number of aggressor row activations…