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The demand for accurate information about the internal structure and characteristics of dynamic random-access memory (DRAM) has been on the rise. Recent studies have explored the structure and characteristics of DRAM to improve processing…

Transistor-based memories are rapidly approaching their maximum density per unit area. Resistive crossbar arrays enable denser memory due to the small size of switching devices. However, due to the resistive nature of these memories, they…

Random-access quantum memories may offer computational advantages for quantum computers and networks. In this paper, we advance arrays of solid-state quantum memories towards their usage as random-access quantum memory. We perform quantum…

This paper summarizes our work on experimentally characterizing, mitigating, and recovering read disturb errors in multi-level cell (MLC) NAND flash memory, which was published in DSN 2015, and examines the work's significance and future…

In order to shed more light on how RowHammer affects modern and future devices at the circuit-level, we first present an experimental characterization of RowHammer on 1580 DRAM chips (408x DDR3, 652x DDR4, and 520x LPDDR4) from 300 DRAM…

While non-volatile memories (NVMs) provide several desirable characteristics like better density and comparable energy efficiency than DRAM, DRAM-like performance, and disk-like durability, the limited endurance NVMs manifest remains a…

The total memory capacity (MC) of linear recurrent neural networks (RNNs) has been proven to be equal to the rank of the corresponding Kalman controllability matrix, and it is almost surely maximal for connectivity and input weight matrices…

Storage Class Memory (SCM) is a class of memory technology which has recently become viable for use. Their namearises from the fact that they exhibit non-volatility of data, similar to secondary storage while also having latencies…

Dynamic Random Access Memory (DRAM) is pervasive in computer systems. Cell vulnerabilities caused by unintended phenomena (forced retention failure, latency alteration, rowhammer and rowpress) lead to unintended bit flips in memory. These…

Our ISCA 2014 paper provided the first scientific and detailed characterization, analysis, and real-system demonstration of what is now popularly known as the RowHammer phenomenon (or vulnerability) in modern commodity DRAM chips, which are…

It is known that in some cases a Random Access Machine (RAM) benefits from having an additional input that is an arbitrary number, satisfying only the criterion of being sufficiently large. This is known as the ARAM model. We introduce a…

Resistive Random Access Memories (RRAMs) are being studied by the industry and academia because it is widely accepted that they are promising candidates for the next generation of high density nonvolatile memories. Taking into account the…

In this paper, we propose a novel memory-centric scheme based on CMOS SRAM for acceleration of data intensive applications. Our proposal aims at dynamically increasing the on-chip memory storage capacity of SRAM arrays on-demand. The…

The aggressive scaling of technology may have helped to meet the growing demand for higher memory capacity and density, but has also made DRAM cells more prone to errors. Such a reality triggered a lot of interest in modeling DRAM behavior…

This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. Typically, the structure of ReRAM cells involves a nanoscale layer of…

Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations…

Modern DRAM is vulnerable to read disturbance (e.g., RowHammer and RowPress) that significantly undermines the robust operation of the system. Repeatedly opening and closing a DRAM row (RowHammer) or keeping a DRAM row open for a long…

Pr1-xCaxMnO3 (PCMO) based resistance random access memory (RRAM) is attractive in large scale memory and neuromorphic applications as it is non-filamentary, area scalable and has multiple resistance states along with excellent endurance and…

We show experimentally that both single and multiple mechanical memories can be encoded in an amorphous bubble raft, a prototypical soft glass, subject to an oscillatory strain. In line with recent numerical results, we find that multiple…

This paper investigates hardware-based memory compression designs to increase the memory bandwidth. When lines are compressible, the hardware can store multiple lines in a single memory location, and retrieve all these lines in a single…