Related papers: Reversible long-range domain wall motion in an imp…
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has…
While an ideal antiparallel ferroelectric wall is considered a unit cell in width (~0.5nm), we show using phase field modeling that the threshold field for moving this wall dramatically drops by 2-3 orders of magnitude if the wall were…
Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of…
Domain walls in ferrimagnets and antiferromagnets behave as relativistic sine-Gordon solitons with the spin-wave group velocity setting the ultimate velocity of domain walls and speed of magnetic devices. While this relativistic regime has…
Domain wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range…
Motion of ferroelectric domain walls greatly contributes to the macroscopic dielectric and piezoelectric response of ferroelectric materials. The domain wall motion through the ferroelectric material is however hindered by pinning on…
Charged polar interfaces such as charged ferroelectric domain walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO3/SrTiO3, across which the normal component of electric polarization changes suddenly, can host large…
We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase…
Magnetic domain wall motion has recently garnered significant interest as a physical mechanism to enable energy-efficient, next-generation brain-inspired computing architectures. However, realizing all behaviors required for neuromorphic…
The rich electron correlations and highly coherent transport in reconfigurable devices sketched by a conductive atomic force microscope tip at the LaAlO3/SrTiO3 interface have enabled the oxide platform an ideal playground for studying…
We revisit the description of ferromagnetic domain wall dynamics through an extended one-dimensional model by allowing flexural distortions of the wall during its motion. This is taken into account by allowing the domain wall center and…
Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation…
We study field-induced domain wall motion in permalloy nanowires with vertically etched nanotrench pinning site. Micromagnetic simulations and electrical measurements are employed to characterize the pinning potential at the nanotrench. It…
Controlling domain wall motion is important due to the impact on the viability of proposed nanowire devices. One hurdle is slow domain wall speed when driven by fields greater than the Walker field, due to nucleation of vortices in the…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…
We have investigated dynamic behaviors of the magnetic domain wall under perpendicular magnetic field pulses in ferromagnetic nanowires using micromagnetic simulations. It has been found that the perpendicular magnetic field pulse can…
We theoretically study domain wall motion induced by an electric field in the quantum anomalous Hall states on a two-dimensional Kagome lattice with ferromagnetic order and spin-orbit coupling. We show that an electric charge is accumulated…
A common strategy for reducing thermal conductivity of polycrystalline systems is to increase the number of grain boundaries. Indeed, grain boundaries enhance the probability of phonon scattering events, which has been applied to control…
We report on extensive domain wall motion in ferroelectric nanocapacitor arrays investigated by piezoresponse force microscopy. Under a much longer or higher bias voltage pulse, compared to typical switching pulse conditions, domain walls…
We present in-situ transmission electron microscopy observations of domain wall motion in thin freestanding potassium niobate single-crystals. We observe that not all domains of a given polarization orientation are equally switchable in…