Related papers: Reversible long-range domain wall motion in an imp…
Ultrafast dynamics of antiferromagnetic materials is an appealing feature for novel spintronic devices. Several experiments have shown that both, the static states and the dynamical behavior of the antiferromagnetic order, are strictly…
Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify…
Natural interfaces in ferroic oxides have developed into versatile playgrounds for studying electronic correlation effects in 2D systems. The microscopic origin of the emergent local electronic properties is often debated, however, as…
Sliding ferroelectrics built from stacked nonpolar monolayers enable out-of-plane polarization and unconventional switching via interlayer sliding, yet the microscopic sliding dynamics remain unclear. Using machine-learning molecular…
The magnetization reversal of three-segment cylindrical nanoelements comprising of alternating nanowire and nanotube sections is investigated by means of Monte Carlo simulations. Such nanoelements may feature a three-state behaviour with an…
Domain switching pathways in ferroelectric materials visualized by dynamic Piezoresponse Force Microscopy (PFM) are explored via variational autoencoder (VAE), which simplifies the elements of the observed domain structure, crucially…
We have investigated numerically the field-driven propagation of perpendicularly magnetized ferromagnetic layers. It was then compared to the historical one-dimensional domain wall (DW) propagation model widely used in spintronics studies…
The motion of domain walls is crucial for ferroelectric switching. Conventionally, the switching dynamics is believed to be determined by the motion of one or a few low-energy domain wall types of dominant population. Here, we challenge…
We present the results of experimental investigations of magnetic switching and magnetotransport in a new generation of magnetic devices containing artificially patterned domains. Our devices are realised by locally reducing the coercive…
We consider a multidomain superconductor/ferromagnet (SF) structure with an in-plane magnetization, assuming that the neighboring domains are separated by the Neel domain walls. We show that an odd triplet long-range component arises in the…
The interaction of electric field with charged domain walls in ferroelectrics is theoretically addressed. A general expression for the force acting per unit area of a charged domain wall carrying free charge is derived. It is shown that, in…
Scattering of spin-up and spin-down electrons while passing through a ferromagnetic domain wall leads to an additional resistance for transport current, usually observed prominently in constricted magnetic structures. In this report, we use…
The shape instability of magnetic domain walls under current is investigated in a ferromagnetic (Ga,Mn)(As,P) film with perpendicular anisotropy. Domain wall motion is driven by the spin transfer torque mechanism. A current density gradient…
Domain walls in ferromagnetic nanowires are potential building-blocks of future technologies such as racetrack memories, in which data encoded in the domain walls are transported using spin-polarised currents. However, the development of…
One of the fundamental effects of the laser-matter interaction is the appearance of an induced transient magnetisation. While the underlying phenomena differ in their microscopic origin and cover a diverse array of materials, here we…
Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in…
Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied in epitaxial systems, including ferroelectric domain walls…
Nanoscale magnetic junction provides a useful approach to act as the building block for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. Here, we study the domain…
In superconducting ferromagnets the equilibrium domain structure is absent in the Meissner state, but appears in the spontaneous vortex phase (the mixed state in zero external magnetic field), though with a period, which can essentially…
In this paper, we elaborate analytical theory of domain wall dynamics close to the angular momentum compensation point based on non-linear dynamic equations derived from the effective Lagrangian of a ferrimagnet. Analysis of the precession…